SBIR Phase I: High Temperature Pressure Sensor

SBIR 第一阶段：高温压力传感器

• 批准号: 0319748
• 负责人: Bruce Odekirk
• 金额: $ 9.71万
• 依托单位: Zeus Semiconductor, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-01 至 2003-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0319748&HistoricalAwards=false
• 关键词: SBIR; Phase; Temperature; Pressure; Sensor

This Small Business Innovation Research (SBIR) Phase I project will demonstrate the feasibility of fabricating SiC based pressure sensors that function accurately and reliably in harsh environments and at high temperatures (20-800 C). There are a number of uses for such devices, particularly in energy conversion and Conservation applications. These innovations will enable formation of diaphragms with precisely controlled thickness, integrated with strain gauge sensing elements and temperature compensation sensing elements. Phase I will also include demonstration of an innovative SiC packaging concept for high temperature and harsh environment use, which will include materials validation, computational analysis and testing. It is anticipated that the successful demonstration of the pressure sensor chip fabrication Processes, the chip module packaging concepts, and the housing assembly design will enable Subsequent prototype development and then commercialization of pressure sensors for high Temperature and harsh environment applications.

该小型企业创新研究 (SBIR) 第一阶段项目将展示制造基于 SiC 的压力传感器的可行性，该传感器可在恶劣环境和高温 (20-800 C) 下准确可靠地工作。 此类设备有多种用途，特别是在能量转换和节能应用中。这些创新将能够形成厚度精确控制的隔膜，并与应变计传感元件和温度补偿传感元件集成。 第一阶段还将包括演示适用于高温和恶劣环境的创新 SiC 封装概念，其中包括材料验证、计算分析和测试。 预计压力传感器芯片制造工艺、芯片模块封装概念和外壳组装设计的成功演示将有助于后续原型开发以及用于高温和恶劣环境应用的压力传感器的商业化。