NER: Exploring Defect Controlled Ferromagnetism in Mn Doped ZnGeP2/GaP Heterojunction

NER：探索锰掺杂 ZnGeP2/GaP 异质结中的缺陷控制铁磁性

• 批准号: 0304621
• 负责人: Lian Li
• 金额: $ 9.72万
• 依托单位: University of Wisconsin-Milwaukee
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-01 至 2005-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0304621&HistoricalAwards=false
• 关键词: NER; Exploring; Defect; Controlled; Ferromagnetism

This Nanoscale Exploratory Research (NER) proposal was submitted in response to the solicitation "Nanoscale Science and Engineering" (NSF 02-148). This project addresses primary challenges in spin injection and transport in semiconductors. In this exploratory research, epitaxial thin films of Mn doped ZnGeP2 will be grown on GaP substrates and resulting magnetic properties investigated. A primary materials issue to be addressed is the role of local defects such as nano clusters in inducing ferromagnetic ordering in ZnGeP2/GaP heterojunctions. Materials will be synthesized by molecular beam epitaxy. The effects of growth conditions on stoichiometry, defects and nano clustering, and doping will be studied by x-ray diffraction and transmission electron microscopy. Atomic structures of the defects and nanoclusters will be examined by cross-sectional scanning tunneling microscopy and spectroscopy. Transport and magnetic properties will be determined by Hall, magnetoresistance, and SQUID measurements. Through a better understanding of the structure and electronic structure of the defects in the epitaxial films, the origin of ferromagnetism in II-IV-V2 chalcopyrite semiconductors is anticipated.The project addresses basic exploratory research issues in a topical area of materials science with high technological relevance; it is considered a high risk/high pay-off activity. The project encompasses the NSE research and education theme of Nanoscale Structures, Novel Phenomena, and Quantum Control. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project is expected to have broad impact by providing unique educational opportunities and basic knowledge critical to potential development of semiconductor spintronic devices having advantages in computing and information storage technologies. The project is jointly supported by the MPS/DMR/EM and ENG/ECS/EPDT programs.

该纳米探索性研究 (NER) 提案是为了响应“纳米科学与工程”(NSF 02-148) 征集而提交的。该项目解决了半导体中自旋注入和传输的主要挑战。在这项探索性研究中，将在 GaP 衬底上生长 Mn 掺杂 ZnGeP2 的外延薄膜，并研究由此产生的磁性能。要解决的一个主要材料问题是局部缺陷（例如纳米簇）在 ZnGeP2/GaP 异质结中诱导铁磁有序化中的作用。材料将通过分子束外延合成。将通过 X 射线衍射和透射电子显微镜研究生长条件对化学计量、缺陷和纳米团簇以及掺杂的影响。缺陷和纳米团簇的原子结构将通过截面扫描隧道显微镜和光谱学进行检查。输运和磁特性将通过霍尔、磁阻和 SQUID 测量来确定。通过更好地了解外延膜缺陷的结构和电子结构，可以预测II-IV-V2黄铜矿半导体中铁磁性的起源。该项目以高科技解决材料科学主题领域的基本探索性研究问题。关联;它被认为是高风险/高回报的活动。该项目涵盖纳米结构、新颖现象和量子控制的 NSE 研究和教育主题。该计划的一个重要特点是通过在基础和技术重要领域对学生进行培训，将研究和教育结合起来。该项目预计将通过提供独特的教育机会和对在计算和信息存储技术方面具有优势的半导体自旋电子器件的潜在开发至关重要的基础知识来产生广泛的影响。该项目由 MPS/DMR/EM 和 ENG/ECS/EPDT 项目联合支持。