NER: Exploring Defect Controlled Ferromagnetism in Mn Doped ZnGeP2/GaP Heterojunction

NER：探索锰掺杂 ZnGeP2/GaP 异质结中的缺陷控制铁磁性

• 批准号: 0304621
• 负责人: Lian Li
• 金额: $ 9.72万
• 依托单位: University of Wisconsin-Milwaukee
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-01 至 2005-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0304621&HistoricalAwards=false
• 关键词: NER; Exploring; Defect; Controlled; Ferromagnetism; NER; Exploring; Defect; Controlled; Ferromagnetism

This Nanoscale Exploratory Research (NER) proposal was submitted in response to the solicitation "Nanoscale Science and Engineering" (NSF 02-148). This project addresses primary challenges in spin injection and transport in semiconductors. In this exploratory research, epitaxial thin films of Mn doped ZnGeP2 will be grown on GaP substrates and resulting magnetic properties investigated. A primary materials issue to be addressed is the role of local defects such as nano clusters in inducing ferromagnetic ordering in ZnGeP2/GaP heterojunctions. Materials will be synthesized by molecular beam epitaxy. The effects of growth conditions on stoichiometry, defects and nano clustering, and doping will be studied by x-ray diffraction and transmission electron microscopy. Atomic structures of the defects and nanoclusters will be examined by cross-sectional scanning tunneling microscopy and spectroscopy. Transport and magnetic properties will be determined by Hall, magnetoresistance, and SQUID measurements. Through a better understanding of the structure and electronic structure of the defects in the epitaxial films, the origin of ferromagnetism in II-IV-V2 chalcopyrite semiconductors is anticipated.The project addresses basic exploratory research issues in a topical area of materials science with high technological relevance; it is considered a high risk/high pay-off activity. The project encompasses the NSE research and education theme of Nanoscale Structures, Novel Phenomena, and Quantum Control. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project is expected to have broad impact by providing unique educational opportunities and basic knowledge critical to potential development of semiconductor spintronic devices having advantages in computing and information storage technologies. The project is jointly supported by the MPS/DMR/EM and ENG/ECS/EPDT programs.

这项纳米级探索性研究（NER）提案是针对“纳米级科学与工程”（NSF 02-148）提交的。该项目解决了半导体旋转注射和运输的主要挑战。在这项探索性研究中，将在GAP底物上生长掺杂的ZnGep2的外延薄膜，并研究了所得的磁性。要解决的主要材料问题是局部缺陷的作用，例如纳米簇在诱导ZnGEP2/GAP异质膜中诱导铁磁顺序中的作用。材料将通过分子束外延合成。生长条件对化学计量，缺陷和纳米聚类以及掺杂的影响将通过X射线衍射和透射电子显微镜进行研究。缺陷和纳米群体的原子结构将通过横截面扫描隧道显微镜和光谱法检查。运输和磁性特性将由Hall，磁倍率和鱿鱼测量结果确定。通过更好地理解外部膜中缺陷的结构和电子结构，预计在II-IV-V2 Chalcopyrite半导体中，铁磁性的起源将被预计。该项目解决了具有高技术相关性的材料科学科学局部研究领域的基本探索性研究问题；它被认为是高风险/高收益活动。该项目涵盖了纳米级结构，新现象和量子控制的NSE研究和教育主题。该计划的一个重要特征是通过培训学生在根本和技术意义上的领域中培训研究和教育。预计该项目将通过提供独特的教育机会和基本知识，这对于对计算和信息存储技术具有优势的半导体Spintronic设备的潜在开发至关重要。该项目由国会议员/DMR/EM和ENG/ECS/EPDT计划共同支持。