CAREER: Materials and Processes for Microlithography, Patterning and Surface Modification (Nanoscale)
职业:微光刻、图案化和表面改性(纳米级)的材料和工艺
基本信息
- 批准号:9985196
- 负责人:
- 金额:$ 20万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2000
- 资助国家:美国
- 起止时间:2000-05-01 至 2005-04-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
ABSTRACTCTS-9985196Clifford L. HendersonGeorgia Institute of Technology Microlithography, the process used to print circuit elements inMicroelectronic devices, is the key technology driver for thesemiconductor industry. Current microlithographic technologies arereaching the limits of their resolution (-180 ran) and new materials and processes must be developed to enable continued progress in theindustry. Failure to develop more advanced, higher resolutionpatterning processes would result in a devastating of semiconductordevices. A two pronged approach to solving this problem will be followed by providing a progression of materials processes that can be pattern features down below 100 nm in size. The first part of the projectdeals with research directed at improving current photoresist (the photosensitive polymeric materials) materials to provide higher resolutions. One of the fundamental problems with developing better photoresists and processes based on current materials is the difficulty associated with measuring the physical properties of the photoresist that govern its lithographic performance, i.e. concentration of acid generated due to exposure and diffusivity of this acid in the polymer matrix. Without this knowledge, it is difficult to rationally design improved materials and processes. This work will develop a new, revolutionary technique based on measuring the capacitance of polymer coated interdigitated electrode (IDE) capacitors which can be used for quantifying the extremely small acid concentrations and diffusion of this acid within the photoresist film. This technique will be calibrated against other acid measurement techniques including microtitration methods. The effect of photoresist composition and processing on the accuracy and sensitivity of this technique will be evaluated. The methods and technology developed in this work will be transferred to industry through operations with industry, including a collaboration with SEMATECH (an R&D consortium for the industry). This technique will make it possible for the first time using non-invasive, nondestructive techniques to extract the physical parameters required to develop predictive models for the performance of photoresists. These models can then be used to guide the rational design of improved photoresist materials and processes that will be capable of resoining features as small as 130 nm.The extension of current lithographic photoresist materials and processes is not sufficient to achieve resolutions below approximately 130 nm. To achieve these resolutions it will be necessary to change from current optical exposure systems (193 nm and 248 nm light) to so-called "Next Generation Lithography" tools (157 nm or 13 nm light). This conversion represents a substantial challenge since the current photoresist materials used at higher wavelengths will not function due to their strong absorbance at these vacuum-UV wavelengths. Thus, new photoresist materials and processes must be developed, The goal of the second part of the proposed research is to develop a novel surface imaging photoresist material based on the polymerization of aromatic monomers at solid surfaces using surfacebound photosensitive radical initiators. These materials will enable pattern generation down to molecular length scales. This project will demonstrate the use of such methods to pattern sub-100 nm features and develop a fundamental understanding of the mechanisms and system parameters that control the performance of these materials. The deposition of covalently linked polymer thin films on surfaces allows for the control of the complete physiochemical nature of surfaces over molecular length scales. Thus, in addition to semiconductor applications, these materials have a number of uses in bioengineening, integrated optics, and other areas that will be explored.Four main educational innovations will be pursued: (1) development of new classes, (2) modification of existing courses to include non-traditional interdisciplinary Problems, (3) implementation of internet based teaching and teaching evaluation tools, (4) creation of a diverse, interdisciplinary research experience for students. Some of the specific goals of these activities are to: (1) present students with opportunites to learn about frontier fields for chemical engineers including microelectronics, (2) engage the active participation of thesemiconductor industry in teaching activities, (3) demonstrate the application of fundamental engineering principles in the analysis of non-traditional problems, and (4) strengthen interest and involvement of under-represented groups in microelectronics.
Abstractcts-9985196Clifford L. Hendersongeorgia技术学院微观印刷研究所,用于打印电路元素Inmicroelectronic设备的过程是该行业的关键技术驱动力。 必须开发当前的微观技术技术(-180 RAN)和新材料和过程,以实现行业的持续进展。 未能开发更先进的更高分辨率的过程将导致半导体的毁灭性。 在解决此问题的两种方便方法之后,将提供材料过程的进展,这些过程的大小低于100 nm。 ProjectDeals的第一部分旨在改善当前的光蛋白天抗体(光敏聚合物材料)材料,以提供更高的分辨率。 基于当前材料开发更好的光孔师和过程的基本问题之一是,与测量控制其光刻性能的光孔的物理特性相关的困难,即由于暴露于聚合物基质中该酸而产生的酸浓度。 没有这些知识,很难合理设计改进的材料和流程。 这项工作将开发一种新的革命性技术,基于测量聚合物涂层的互电极(IDE)电容器的电容,可用于量化极小的酸浓度和在光蛋白抗菌膜中的这种酸的扩散。 该技术将针对其他酸测量技术进行校准,包括微识别方法。 将评估光孔组成和加工对该技术准确性和灵敏度的影响。 这项工作中开发的方法和技术将通过与行业的运营转移到行业,包括与Sematech(该行业的研发联盟)的合作。该技术将首次使用非侵入性的,无损的技术来提取为光孔剂的性能开发预测模型所需的物理参数。 然后,这些模型可用于指导改进的光孔材料和过程的合理设计,这些材料和过程将能够重新占据至130 n的特征。当前光刻光刻师材料和过程的扩展不足以实现低于130 nm的分辨率。 为了实现这些决议,有必要从当前的光接触系统(193 nm和248 nm的光)更改为所谓的“下一代光刻”工具(157 nm或13 nm的光线)。 这种转换代表了一个重大的挑战,因为当前在较高波长处使用的光孔材料由于它们在这些真空度波长下的强吸光度而无法发挥作用。 因此,必须开发新的光质材料和过程,拟议的研究的第二部分的目的是基于使用表面光敏感的自由基发起人在实心表面上的芳族单体聚合基于芳族单体的聚合。 这些材料将使图案生成至分子长度尺度。 该项目将证明使用此类方法来模拟100 nm的特征,并对控制这些材料性能的机制和系统参数产生基本理解。 共价连接的聚合物薄膜在表面上的沉积使得在分子长度尺度上控制表面的完整生理化学性质。 Thus, in addition to semiconductor applications, these materials have a number of uses in bioengineening, integrated optics, and other areas that will be explored.Four main educational innovations will be pursued: (1) development of new classes, (2) modification of existing courses to include non-traditional interdisciplinary Problems, (3) implementation of internet based teaching and teaching evaluation tools, (4) creation of a diverse, interdisciplinary research学生的经验。 这些活动的某些具体目标是:(1)向学生提供有关化学工程师的边界领域的机会,包括微电子学,(2)使该血管导向行业的积极参与教学活动,(3)证明了基本工程原理在非传统问题分析中的基本工程原理的应用,并且(4)(4)(4)在培训中的培训和培训的群众群体的分析量很少见。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Clifford Henderson其他文献
Clifford Henderson的其他文献
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{{ truncateString('Clifford Henderson', 18)}}的其他基金
Conference: 63rd International Conference on Electron, Ion, and Photon Beam Technologies and Nanofabrication (EIPBN); Minneapolis, Minnesota; May 28-31, 2019
会议:第63届电子、离子和光子束技术与纳米加工国际会议(EIPBN);
- 批准号:
1935293 - 财政年份:2019
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
SusChEM: Collaborative Research: Efficient biological activation and conversion of short-chain hydrocarbons
SusChEM:合作研究:短链碳氢化合物的高效生物活化和转化
- 批准号:
1938893 - 财政年份:2018
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
EAGER: Templated Manufacturing of Graphene
EAGER:石墨烯的模板化制造
- 批准号:
1251639 - 财政年份:2012
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
Understanding and Exploiting the Transport Behavior of Polymers in Confined Geometries
了解和利用聚合物在受限几何形状中的传输行为
- 批准号:
0700760 - 财政年份:2007
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
Characterization and Understanding of the Anomolous Diffusion Behavior in Polymer Ultra-thin Films
聚合物超薄膜中反常扩散行为的表征和理解
- 批准号:
0652032 - 财政年份:2007
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
GOALI: Rational Design of Advanced Photoresist Materials for 193 nm and 157 nm Lithography
目标:193 nm 和 157 nm 光刻先进光刻胶材料的合理设计
- 批准号:
0300467 - 财政年份:2003
- 资助金额:
$ 20万 - 项目类别:
Continuing Grant
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