Support for 3rd International Workshop on Modeling in Crystal Growth at Stony Brook: Expanding the Research Base and Student Participation

支持石溪第三届晶体生长建模国际研讨会：扩大研究基础和学生参与

• 批准号: 9910538
• 负责人: Vishwanath Prasad
• 金额: $ 1万
• 依托单位: SUNY at Stony Brook
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-09-15 至 2001-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9910538&HistoricalAwards=false
• 关键词: Support; 3rd; International; Workshop; Modeling

ABSTRACTProposal Number: CTS 9910538Principal Investigator: V. PrasadThis grant will support participation by US scientists, faculty, and graduate students at the Third International Workshop on Modeling in Crystal Growth.The intent of the funding is to expand the research base and student participation. The previous two workshops were held in Germany and Belgium and with the increased emphasis on crystal growth it is appropriate that a workshop be held in the United States. The workshop will cover a broad range of topics related to mathematical modeling and numerical analysis of the growth of single crystals and crystalline layers. It will focus on physical phenomena taking place at the macro-, meso-, and micro-scale, global modeling of the processes, model-based design of experiments, and the use of the models for prototyping and control. Speakers, who do not normally work in crystal growth but whose expertise will assist in understanding the growth process, will give presentations in the areas of thermal manufacturing, computational material processing, process optimization, virtual reality, and control. An abstract proceeding and a volume containing peer reviewed papers will be published.

摘要提案编号：CTS 9910538 首席研究员：V. Prasad 这笔赠款将支持美国科学家、教师和研究生参加第三届晶体生长建模国际研讨会。这笔资金的目的是扩大研究基础和学生参与。前两次研讨会在德国和比利时举行，随着对晶体生长的日益重视，在美国举办研讨会是合适的。该研讨会将涵盖与单晶和晶层生长的数学建模和数值分析相关的广泛主题。 它将重点关注宏观、中观和微观尺度上发生的物理现象、过程的全局建模、基于模型的实验设计以及模型在原型设计和控制中的使用。 演讲者通常不从事晶体生长工作，但其专业知识将有助于理解生长过程，他们将在热制造、计算材料处理、工艺优化、虚拟现实和控制领域进行演讲。摘要论文集和包含同行评审论文的卷将出版。