GOALI/IUCP: Subsurface Damage in II-VI Semiconductors
GOALI/IUCP:II-VI 半导体中的次表面损伤
基本信息
- 批准号:9713747
- 负责人:
- 金额:$ 21.22万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:1997
- 资助国家:美国
- 起止时间:1997-09-01 至 2002-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This university-industry collaboration research project seeks to understand the subsurface damage resulting from ultra-fine finishing processes in the manufacture of wide band-gap semiconductor substrates. This understanding will aid in identifying the processing conditions that can overcome subsurface damage problems in producing these substrates. Substrates of II-VI semiconductor materials including ZnSe, CdS and ZnO will be prepared by a variety of surface processing methods including ultra-precision machining and polishing. The resulting subsurface lattice disorder will be assessed with the use of ion beam channeling, cathodoluminescent, and scanning capacitance microscopy. Subsequent to surface characterization, epitaxial films will be grown on the substrates by molecular beam epitaxy, and will be used to do performance testing. The project will be conducted in collaboration with Eagle-Picher Research Laboratory, Los Alamos National Laboratory, and the National Institute of Standards and Technology. The project can lead to a fundamental understanding of subsurface damage in the ultra-fine finishing of semiconductor substrates, with significant practical benefits in the production of LEDs and lasers among others. A major strength of the project is the existence of strong partnerships with industry and government laboratories.
该大学与工业界合作研究项目旨在了解宽带隙半导体基板制造中超精细精加工工艺造成的表面下损伤。 这种理解将有助于确定可以克服生产这些基材时的表面下损伤问题的加工条件。 包括ZnSe、CdS和ZnO在内的II-VI族半导体材料的衬底将通过包括超精密加工和抛光在内的多种表面处理方法来制备。 由此产生的次表面晶格无序将使用离子束通道、阴极发光和扫描电容显微镜进行评估。 在表面表征之后,将通过分子束外延在基板上生长外延膜,并将用于进行性能测试。 该项目将与 Eagle-Picher 研究实验室、洛斯阿拉莫斯国家实验室和国家标准与技术研究所合作进行。 该项目可以使人们对半导体基板超精细精加工中的次表面损伤有一个基本的了解,对 LED 和激光器等的生产具有显着的实际效益。 该项目的主要优势是与行业和政府实验室建立了牢固的合作伙伴关系。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Don Lucca其他文献
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{{ truncateString('Don Lucca', 18)}}的其他基金
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合作研究:先进成像系统复杂光学元件的制造
- 批准号:
2210365 - 财政年份:2022
- 资助金额:
$ 21.22万 - 项目类别:
Standard Grant
Fundamental Study of Ultra-Precision Machining and Near Surface Damage Evolution in Single Crystal Fluorides for Advanced Optics
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- 批准号:
1727244 - 财政年份:2017
- 资助金额:
$ 21.22万 - 项目类别:
Standard Grant
Collaborative Research: Manufacturing of Complex Lenses for Thermal Imaging, Night Vision and Surveillance Systems
合作研究:制造用于热成像、夜视和监控系统的复杂镜头
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1437232 - 财政年份:2014
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$ 21.22万 - 项目类别:
Standard Grant
NUE: Nanotechnology Education for Roll-to-Roll Manufacturing
NUE:卷对卷制造纳米技术教育
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1446097 - 财政年份:2014
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$ 21.22万 - 项目类别:
Standard Grant
Collaborative Research: Ion Irradiation-Induced Nanocrystallization of Metallic Glasses and Its Effects on Their Mechanical Properties
合作研究:离子辐照诱导金属玻璃纳米晶化及其对其机械性能的影响
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1130606 - 财政年份:2011
- 资助金额:
$ 21.22万 - 项目类别:
Standard Grant
Collaborative Research: Atomic Plane Electrical Contacts
合作研究:原子平面电接触
- 批准号:
0521989 - 财政年份:2005
- 资助金额:
$ 21.22万 - 项目类别:
Standard Grant
Sensors: Synthesis of Active Quantum Dot Infra-Red (IR) Sensors
传感器:活性量子点红外 (IR) 传感器的合成
- 批准号:
0529085 - 财政年份:2005
- 资助金额:
$ 21.22万 - 项目类别:
Standard Grant
US-Germany Cooperative Research: High Resolution Surface Zone Analysis in the Transregional Center on Process Chains for the Replication of Complex Optical Components
美德合作研究:复杂光学元件复制工艺链跨区域中心的高分辨率表面区域分析
- 批准号:
0352377 - 财政年份:2004
- 资助金额:
$ 21.22万 - 项目类别:
Standard Grant
GOALI: Creation of Crystalline Surfaces for Short Wavelength Light Emitters
目标:为短波长发光体创建晶体表面
- 批准号:
0100318 - 财政年份:2001
- 资助金额:
$ 21.22万 - 项目类别:
Continuing Grant
U.S.- Germany Cooperative Research: Process Chains for the Replication of Complex Optical Components: High Resolution Surface Zone Analysis
美德合作研究:复杂光学元件复制的工艺链:高分辨率表面区域分析
- 批准号:
0128050 - 财政年份:2001
- 资助金额:
$ 21.22万 - 项目类别:
Standard Grant
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