Microscopy and Modeling of Collective Behavior during Ion Beam Processing of Materials

材料离子束加工过程中集体行为的显微镜和建模

• 批准号: 9632252
• 负责人: David Cahill
• 金额: $ 32.99万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-07-15 至 2000-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9632252&HistoricalAwards=false
• 关键词: Microscopy; Modeling; Collective; Behavior; during

9632252 Cahill This research project aims for fundamental understanding of ion-induced surface damage using atomic resolution STM and molecular dynamics(MD) computer simulation methods. The approach is to characterize a wide variety of materials and correlate the damage observed using the STM to MD simulations of the ion-surface collisions; the research is also oriented toward critically testing some of the assumptions commonly made in MD simulations. Defect generation in solids is a complex many-body process which cannot be theoretically treated in the binary collision approximation. Collective behaviors such as thermal spikes play a critical role in determining defect structures and are increasingly important for precision ion-beam processing applications such as shallow implant doping of semiconductors. A variety of materials(Ge, Si, Au, Pt, Cu, Ni, GaAs, GaN and amorphous NiZr) will be grown by MBE and examined by STM for ion impacts using Ga, In, and Au in the energy range of 1 keV to 40 keV. MD simulations will be performed for 5-15 keV impacts on Ge, Pt, and amorphous Cu to elucidate the mechanisms of surface damage. %%% The research will contribute basic materials science knowledge at a fundamental level of broad technological relevance to advanced electronic materials processing. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and processing more advanced materials and devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9632252 Cahill该研究项目旨在使用原子分辨率STM和分子动力学（MD）计算机模拟方法对离子诱导的表面损伤的基本了解。 该方法是表征多种材料，并将使用STM观察到的损害与离子表面碰撞的MD模拟相关。该研究还针对批判性测试MD模拟中常见的一些假设。 固体中的缺陷产生是一个复杂的多体过程，理论上不能在二进制碰撞近似中对其进行处理。 诸如热尖峰之类的集体行为在确定缺陷结构中起着关键作用，并且对于精确的离子束处理应用（例如浅植入物的浅植入物掺杂）越来越重要。 多种材料（GE，Si，au，pt，cu，ni，gaas，gan，gan和无定形的NIZR）将通过MBE生长，并通过STM检查，用于使用GA，IN和AU的离子撞击，在1 KEV的能量范围为1 KEV至40 KEV。 MD模拟将对GE，PT和无定形CU进行5-15 KEV的影响，以阐明表面损伤的机理。 %%％研究将在与先进的电子材料处理的广泛技术相关性的基本水平上贡献基本材料科学知识。 此外，预计从该研究项目中获得的知识和理解有望通过提供基本的理解以及设计和处理更高级的材料和设备的基础来以一般的方式提高高级设备和电路的性能。 该计划的一个重要特征是通过培训学生在根本和技术意义上的领域中培训研究和教育。 ***