Synthesis and Characterization of Silicon Carbide - Group III Nitrides Layered Structures and Alloys

碳化硅-III族氮化物层状结构及合金的合成与表征

• 批准号: 9627333
• 负责人: James Edgar
• 金额: $ 25.47万
• 依托单位: Kansas State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-07-15 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9627333&HistoricalAwards=false
• 关键词: Synthesis; Characterization; Silicon; Carbide; Group; Synthesis; Characterization; Silicon; Carbide; Group

9627333 Edgar This research project aims for fundamental understanding of factors controlling the polytypes and phase stability of epitaxial multilayers and alloys of SiC combined with AlN and GaN. Vapor phase epitaxy of layered structures and alloys such as SiC/AlN/SiC, (AlN)x(SiC)1-x and (GaN)x(SiC)1-x of high crystalline perfection, controlled compositions, polytypes, and interfacial quality will be studied. The approach is oriented to relating basic chemical and processing conditions associated with epitaxial growth to the multilayered structures or polytypes realized. X-ray diffraction techniques will be used to study dependence of thin film crystal quality, strain, local atomic configuration, and polytype on the processing conditions, substrate material, orientation, and composition. Additionally, thermodynamic factors stabilizing these structures and alloys, and kinetic barriers preventing decomposition to bulk stable forms will be evaluated. %%% The research will contribute basic materials science knowledge of technological relevance to advanced electronic/photonic materials synthesis and processing. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and processing more advanced materials. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9627333 Edgar该研究项目的目的是对控制SIC的外延多层和合金的多型型和相位稳定性的因素与Aln和Gan相结合。将研究分层结构和合金的蒸气相外延，例如SiC/Aln/SiC，（Aln）X（SIC）1-X和（GAN）X（SIC）X（SIC）1-X（高结晶完美，受控组成，多型，多型和界面质量）。该方法面向将与外延生长相关的基本化学和加工条件与实现的多层结构或多型相关。 X射线衍射技术将用于研究薄膜晶体质量，应变，局部原子构型以及对加工条件，底物材料，方向和组成的依赖性。 此外，将评估稳定这些结构和合金的热力学因子，并评估防止散装稳定形式分解的动力学障碍。 %%％研究将为高级电子/光子材料的综合和加工提供基础材料科学知识。 此外，通过提供基本的理解和设计和处理更高级材料的基础，预计该研究项目从该研究项目中获得的知识和理解将以一般的贡献。 该计划的一个重要特征是通过培训学生在根本和技术意义上的领域中培训研究和教育。 ***