A Systematic Study of the Electrical Properties of Grain Boundaries Formed by Wafer Bonding

晶圆键合晶界电学特性的系统研究

• 批准号: 9616784
• 负责人: David Clarke
• 金额: $ 31.05万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-04-15 至 2001-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9616784&HistoricalAwards=false
• 关键词: Systematic; Study; Electrical; Properties; Grain

9616784 Clarke A systematic study of the electrical characteristics of grain boundaries in both a covalent semiconductor (silicon) and an ionic semiconductor (zinc oxide) is proposed in order to establish relationships between grain boundary crystallography, dopant concentration and electronic states, intrinsic and extrinsic. Such basic relationships are lacking in large part because of the difficulty in preparing large, flat areas of grain boundary of controlled misorientation that can be characterized both electrically and structurally. To overcome this limitation, as well as to control the concentration and type of grain boundary doping, it is proposed to use the rapidly developing technology of "wafer bonding" to prepare well-defined grain boundaries. Amongst the specific objectives of the proposed research are: the functional dependence of the number and energy of defect states with angular misorientation for twist boundaries in silicon; the demonstration that ZnO epitaxial films can be wafer bonded to form grain boundaries, and the subsequent extension to identifying the defect states produced by individual and combined dopants of ZnO grain boundaries as a function of crystallographic misorientation; and the development of a simulation scheme for describing the electrical characteristics of polycrystalline semiconductors in terms of the grain boundary defect states. %%% The proposed research will study the electrical properties of grain boundaries in polycrystalline semiconductors of importance in advanced electronic systems, such as zinc oxide-based varistor ceramics (used in electrical surge protection systems) and solar cells made from polycrystalline silicon. Understanding these properties will enable materials scientists to design improved materials that meet the requirements of tomorrow's high performance applications. %%%

9616784 CLARKE对共价半导体（硅）和离子半导体（氧化锌）的晶界电特性进行了系统研究，以建立晶界晶体晶体学，毒图浓度和电子状态和电子状态，内在和外在的关系之间的关系。 这种基本关系在很大程度上缺乏，因为很难制备可控不良的晶界的较大，平坦的区域，这些区域可以用电气和结构来表征。 为了克服这一局限性，并控制晶界掺杂的浓度和类型，建议使用快速发展的“晶圆粘合”技术来制备定义明确的晶界。 拟议研究的特定目标之一是：缺陷状态的功能依赖性，具有角度不良的硅旋转边界的数量和能量；可以将ZnO外延膜的晶状粘结以形成晶界的证明，并随后扩展以识别由ZnO晶界的个体和联合掺杂剂产生的缺陷状态作为结晶错误的函数；以及一种模拟方案的开发，用于描述从晶界缺陷状态方面的多晶半导体的电特性。 %%;拟议的研究将研究高级电子系统中重要性的多晶半导体中晶界的电性能，例如基于氧化锌的氧化锌品种陶瓷（用于电激发保护系统）和由多晶硅制成的太阳能电池。 了解这些特性将使材料科学家能够设计出满足明天高性能应用要求的改进材料。 %%%