MOCVD Precursors to Binary and Ternary Transition Metal Nitrides

二元和三元过渡金属氮化物的 MOCVD 前驱体

• 批准号: 9510712
• 负责人: Charles Winter
• 金额: $ 25.6万
• 依托单位: Wayne State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-01 至 1998-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9510712&HistoricalAwards=false
• 关键词: MOCVD; Precursors; Binary; Ternary; Transition

This award is made by the Office of Special Projects in the Chemistry Division. The research will explore the range of ligand intermediates that may be formed in Chemical Vapor Deposition (CVD) of thin films of important binary and ternary metal nitrides with the formula MN, where M is an early transition metal. CVD routes will be developed using volatile metal halides and nitrogen compounds. A major goal of the work is to identify structures that serve as single-source precursors and to try to understand the chemistry involved in their transformations to binary materials. All new compounds will be characterized by various analytical and spectroscopic techniques. Among the systems to be studied are precursors with hydrazido ligands, monomeric titanium nitrido complexes, amorphous titanium-silicon-nitrogen and tantalum-silicon-nitrogen films as barriers in microelectronics devices, and CVD routes to ternary metal nitrides, which possess properties superior to those of the binary materials. %%% Thin ceramic films made by CVD processes are of growing technological importance. Films of early transition metal nitrides of the type studied in this project possess a number of useful properties, including extreme hardness, excellent chemical resistance, desirable optical characteristics, and good electrical conductivity. The research supported in this project will lead to new precursors and processes for CVD which will solve problems with current methods, such as high deposition temperatures, and will develop paths to new ternary metal nitrides for which no CVD routes are currently available.

该奖项由化学部特殊项目办公室颁发。该研究将探索在重要二元和三元金属氮化物的薄膜中与配方MN的薄膜中可能形成的配体中间体的范围，其中m是早期过渡金属。 CVD路线将使用挥发性金属卤化物和氮化合物开发。 这项工作的主要目标是确定用作单源前体的结构，并试图理解其转换为二元材料的化学反应。 所有新化合物将以各种分析和光谱技术为特征。 在要研究的系统中，有hidyazido配体，单体钛钛合症，无晶钛二硅氮和坦塔alum-silicon-氮膜作为微型电器设备的壁垒，以及具有高级属性的属性材料的cvd途径。 CVD工艺制作的%% %%薄陶瓷膜的技术重要性越来越重要。 该项目研究类型的早期过渡金属氮化金属的膜具有许多有用的特性，包括极端硬度，出色的化学耐化学性，理想的光学特性和良好的电导率。 该项目支持的研究将为CVD提供新的先驱和过程，该过程将通过当前方法（例如高沉积温度）解决问题，并将开发通向新三元金属氮化物的途径，目前没有CVD路线可用。