International Postdoctoral Fellows Program: Mechanism of Fermi Level Pinning at Metal-Semiconductor Nanojunctions Fabricated by STM Tip

国际博士后项目：STM Tip 制造的金属-半导体纳米结的费米能级钉扎机制

• 批准号: 9505480
• 负责人: William Tong
• 金额: $ 4.03万
• 依托单位: Individual Award
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-01 至 1996-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9505480&HistoricalAwards=false
• 关键词: International; Postdoctoral; Fellows; Program; Mechanism

9505480 Tong The International Junior Investigator and Postdoctoral Fellows Program enables U.S. scientists and engineers to conduct three to twenty-four months of research abroad. The program's awards provide opportunities for joint research, and the use of unique or complementary facilities, expertise and experimental conditions abroad. This award will support a twelve-month postdoctoral research visit by Dr. William M. Tong to work with Dr. Paolo Perfetti at the Instituto di Struttura della Materia in Italy. The goal of this proposal is to fabricate metal- semiconductor conductor junctions of atomic scale and probe their electronic structure as a function of their sizes and other parameters. The tool to perform these experiment is the scanning tunneling microscopy (STM). Small islands of most metals can be deposited by field ionizing metal atoms from a pretreated tungsten tip. The electronic structure of these junctions is investigated by scanning tunneling spectroscopy (STS), which is essentially the IV curve of the islands. This study will not only allow exploration of the relatively uncharged area of nano-island deposition, but it will also help gain a better understanding of the Fermi Level (FL) pinning mechanism in the near-atomic limit by mapping out how the density of states (DOS) evolves as a function of island size, local defects, dopant levels, and other factors. ***

9505480 Tong 国际初级研究员和博士后研究员计划使美国科学家和工程师能够在国外进行三到二十四个月的研究。该项目的奖项提供了联合研究以及使用国外独特或互补的设施、专业知识和实验条件的机会。 该奖项将支持 William M. Tong 博士与 Paolo Perfetti 博士在意大利 Instituto di Struttura della Materia 进行为期 12 个月的博士后研究访问。 该提案的目标是制造原子尺度的金属-半导体导体结，并探测其电子结构作为其尺寸和其他参数的函数。 执行这些实验的工具是扫描隧道显微镜（STM）。 大多数金属的小岛可以通过场电离来自预处理的钨尖端的金属原子来沉积。 通过扫描隧道光谱 (STS) 研究这些结的电子结构，这本质上是岛的 IV 曲线。 这项研究不仅可以探索纳米岛沉积相对不带电的区域，而且还可以通过绘制态密度如何变化来帮助更好地理解近原子极限的费米能级（FL）钉扎机制。 （DOS）随着岛尺寸、局部缺陷、掺杂剂水平和其他因素的变化而变化。 ***