Physics of Strong Disorder and Correlation

强无序与相关物理学

• 批准号: 9216007
• 负责人: Patrick Lee
• 金额: $ 23.4万
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-01-01 至 1996-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9216007&HistoricalAwards=false
• 关键词: Physics; Strong; Disorder; Correlation

In this renewal grant theoretical research will focus on the effects of strong disorder and correlation in electron systems. New results have been obtained for the fractional quantized Hall state, particularly in confined geometry. The overlap factor which appears in tunnelling measurements has been calculated and the possible existence of a Fermi liquid state at half filling has been explored. The new work will build on this past work to further study the properties of edge channels and the Aharonov-Bohm effect in the fractional quantized Hall regime. %%% Theoretical research will be done on the fundamental properties of the fractional quantized Hall state - a new state of matter exhibited by two-dimensional electron gases. This special state of matter is usually obtained at semiconductor interfaces in strong magnetic fields. The effects of strong disorder and correlation among the electrons will be studied. While contributing to basic condensed matter physics, there may be wider ramifications of this work in microelectronics.

在这项更新的授予理论研究中，将重点关注电子系统中强障碍和相关性的影响。 分数量化的霍尔态已获得新的结果，特别是在限制的几何形状中。 已经计算出隧道测量中出现的重叠因子，并探索了一半填充处的费米液态状态的可能存在。 新作品将基于过去的工作，以进一步研究边缘频道的特性和分数量化的霍尔制度中的aharonov-bohm效应。 %% %%理论研究将对分数量化霍尔州的基本特性进行 - 二维电子气体展示的新物质状态。 这种特殊的物质通常在强磁场的半导体界面处获得。 将研究强烈混乱和电子之间的相关性的影响。 在有助于基本的凝结物理学的同时，这项工作在微电子学上可能会有更广泛的影响。