AIT-CCNAA Cooperative Research: Structure of Semiconductor Surfaces

AIT-CCNAA 合作研究：半导体表面结构

• 批准号: 9011271
• 负责人: George Keulks
• 金额: $ 3.59万
• 依托单位: University of Wisconsin-Milwaukee
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-09-01 至 1995-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9011271&HistoricalAwards=false
• 关键词: AIT; CCNAA; Cooperative; Research; Structure

This is a three.year collaborative Research project between Dr. George Keulks, University of Wisconsin at Milwaukee and Dr. C. S. Fang of Institute of Physics, Academia Sinica, Taiwan, sponsored by the AIT.CCNAA Cooperative Science Program. This proposal was submitted by Dr. David Tong, who was a NSF Program Director for the Condensed Matter Theory Program. Because NSF does not allow previous program officers to negotiate with the Foundation within a year of the person's departure, Dr. George Keulks replaces Dr. Tong as a P. I. for this proposal. This proposal plans to study the formation of metal semiconductor interfaces and subsequent growth of semiconductor substrates. The Institute of Physics Academia Sinica in Taiwan has invested more than 1 million dollars in the acquisition of state.of.the.art ultra.high vacuum spectroscopic instruments, which are essential in making experimental measurements for testing Tong's semiconductor structure model. At present, Taiwan's Institute of Physics is one of the few places where such >measurements can be made and only place which makes experimental >measurements on the metal, Ga. This study can expand our understanding of surface structure, which is essential in the development of new and advanced materials, many which have been used for making computer chips and other electronics.

这是威斯康星大学密尔沃基分校的 George Keulks 博士和台湾中央研究院物理研究所的 C. S. Fang 博士之间为期三年的合作研究项目，由 AIT.CCNAA 合作科学计划资助。 该提案由美国国家科学基金会凝聚态理论项目主任 David Tong 博士提交。 由于 NSF 不允许之前的项目官员在离职后一年内与基金会进行谈判，因此 George Keulks 博士取代 Tong 博士成为该提案的私人情报员。 该提案计划研究金属半导体界面的形成以及随后的半导体衬底的生长。 台湾中央研究院物理研究所投资超过100万美元购买了最先进的超高真空光谱仪器，这些仪器对于测试唐的半导体结构模型的实验测量至关重要。 台湾物理研究所是目前为数不多的可以进行这种测量的地方之一，也是唯一对金属Ga进行实验测量的地方。这项研究可以扩大我们对表面结构的认识，这对于发展至关重要。新型先进材料，其中许多已用于制造计算机芯片和其他电子产品。