Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector

In our previous work [Sun et al., Appl. Phys. Lett. 100, 013506 (2012)], we inferred the existence of localized self-mixing in an antenna-coupled field-effect terahertz detector. In this Letter, we report a quasistatic self-mixing model taking into account the localized terahertz fields and its verification by comparing the simulated results with the experimental data in a two-dimensional space of the gate voltage and the drain/source bias. The model well describes the detector characteristics: not only the magnitude, but also the polarity, of the photocurrent can be tuned. The existence of strongly localized self-mixing in such detectors is confirmed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4705306]

在我们之前的工作[Sun等人，《应用物理快报》100，013506（2012）]中，我们推断在一个天线耦合场效应太赫兹探测器中存在局域自混合。在这篇快报中，我们报道了一个考虑局域太赫兹场的准静态自混合模型，并通过在栅极电压和漏极/源极偏压的二维空间中将模拟结果与实验数据进行比较来验证该模型。该模型很好地描述了探测器的特性：不仅光电流的大小，而且其极性都可以被调节。在这类探测器中强局域自混合的存在得到了证实。（C）2012美国物理学会。[http://dx.doi.org/10.1063/1.4705306]