Persistent photoconductivity in II‐VI and III‐V semiconductor alloys and a novel infrared detector

Persistent photoconductivity (PPC) mechanisms, as well as the similarities and the differences of PPC properties in II‐VI and III‐V semiconductor alloys have been investigated. The potential applications based on PPC phenomenon in these two kinds of materials are discussed. We have observed that PPC induced in a II‐VI mixed crystal by visible (above band gap) illumination can be quenched by long wavelength infrared radiation even at room temperature, which further supports our interpretation that PPC in II‐VI mixed crystals is caused by random local potential fluctuations induced by compositional fluctuations. A newly developed infrared detector based on the PPC infrared quenching property of II‐VI semiconductor alloys is also reported.

对持续光电导（PPC）机制以及II - VI族和III - V族半导体合金中PPC特性的异同进行了研究。讨论了基于这两类材料中PPC现象的潜在应用。我们观察到，即使在室温下，通过可见光（高于带隙）照射在II - VI族混合晶体中产生的PPC也可被长波长红外辐射猝灭，这进一步支持了我们的解释，即II - VI族混合晶体中的PPC是由成分涨落引起的随机局域势涨落导致的。还报道了一种基于II - VI族半导体合金的PPC红外猝灭特性新开发的红外探测器。