Optical properties of nitride-rich SiN<math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si32.svg" display="inline" id="d1e814" class="math"><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math> and its use in CMOS-compatible near-UV Bragg filter fabrication

Nitride-rich silicon-nitride (SiN) is being explored for its potential as a suitable optical material for use in microsystems operating in the near-UV spectral range. Although silicon-rich SiN is widely accepted as a CMOS-compatible dielectric and micromechanical material, its optical absorption limits application to the visible to near-IR spectral range. However, this work shows that a balance can be achieved between a sufficiently high index of refraction ( 2) and an acceptable optical loss () in nitride-rich SiN of appropriate composition (). Bragg reflectors with a design wavelength at = 330 nm are used for validation. PECVD is used for sample preparation and experiments confirm that the spectral range available for use of SiN-based optical microsystems extends to wavelengths as low as 300 nm.

富氮氮化硅（SiN）因其作为适用于近紫外光谱范围微系统的光学材料的潜力而正在被研究。尽管富硅氮化硅作为一种与互补金属氧化物半导体（CMOS）兼容的电介质和微机械材料已被广泛接受，但其光吸收限制了其在可见到近红外光谱范围的应用。然而，这项工作表明，在具有适当成分（）的富氮氮化硅中，可以在足够高的折射率（>2）和可接受的光损耗（）之间取得平衡。设计波长为λ = 330 nm的布拉格反射器被用于验证。等离子体增强化学气相沉积（PECVD）用于样品制备，并且实验证实，基于氮化硅的光学微系统可使用的光谱范围可延伸至低至300 nm的波长。