Topological materials for helicity-dependent THz emission

Topological insulator (TI) materials are emerging as novel materials for spintronic applications. Here, we demonstrate helicity-dependent THz emission from Dirac semi-metal Cd3As2 nanowires and used scattering-type scanning optical microscopy (s-SNOM) to identify potential single nanowire candidates for device applications. The preliminary investigation data of a candidate nanowire shows a homogenous topography and constant dielectric function in the MIR range. Indicating high-quality crystalline growth ideal for topological characterization.

拓扑绝缘体（TI）材料正成为自旋电子学应用的新型材料。在此，我们展示了狄拉克半金属Cd₃As₂纳米线的依赖于螺旋性的太赫兹发射，并使用散射式扫描近场光学显微镜（s - SNOM）来确定用于器件应用的潜在单根纳米线候选物。一根候选纳米线的初步研究数据显示，在中红外（MIR）范围内具有均匀的形貌和恒定的介电函数，这表明其高质量的晶体生长对于拓扑特性表征是理想的。