Deposition mechanism and characterizations of CuInS2 film prepared by one-step electro-deposition

CuInS2 films had been prepared on FTO using a one-step deposition method, with sodium citrate complexing agent. The film was deposited from the solution containing 20 mmol L−1 CuSO4, 7.5 mmol L−1 In2S3O12, 75 mmol L−1 Na2S2O3 and 8.5 mmol L−1 Na3C6H5O7 fo

采用一步沉积法，以柠檬酸钠为络合剂，在氟掺杂氧化锡（FTO）上制备了CuInS₂薄膜。该薄膜是从含有20毫摩尔每升硫酸铜、7.5毫摩尔每升In₂S₃O₁₂、75毫摩尔每升硫代硫酸钠和8.5毫摩尔每升柠檬酸钠的溶液中沉积得到的。