基于串并联磁控忆阻器的耦合行为研究

Memristors are nanoscale devices with low power consumption and high integration, possessing huge application potential. A single device has rich electrical properties, and its series-parallel circuits exhibit even richer dynamical behaviors. However, in a high-density integrated environment, the coupling effect of memristors cannot be ignored. Therefore, this paper first derives the mathematical model of coupled memristors based on magnetically controlled memristors. Secondly, under the premise of considering different polarity connections and coupling strengths, the coupling situations of two magnetically controlled memristors in series and in parallel are discussed, a detailed theoretical analysis is carried out, and the influence of the coupling effect on the memristive system is explored through numerical simulation. At the same time, a graphical user interface based on Matlab is designed to intuitively display the coupling characteristic curves under different parameters. Further, this paper shows the influence of the initial resistance on the normal working range of the memristor with and without coupling. Finally, a Pspice simulator of coupled memristors is constructed to verify the coupling effect between memristors again from the perspective of the circuit. The experimental results show that the coupling of the same polarity enhances the change of the resistance, while the coupling of the opposite polarity slows down the change of the resistance. These dynamical characteristics can be well applied in memristive networks and also provide a powerful theoretical basis for comprehensively considering the design of memristive system circuits.

忆阻器是纳米级器件，其功耗低、集成度高，有着巨大的应用潜能。单个器件具有丰富的电学性质，其串并联电路更展现了丰富的动力学行为。然而，忆阻器在高密度集成的环境下，其耦合效应不可忽视。因此，本文首先基于磁控忆阻器推导了耦合忆阻器的数学模型。其次，在考虑不同极性连接和耦合强度的前提下，讨论两个磁控忆阻器串并联的耦合情况，进行了详细的理论分析，并通过数值仿真探索了耦合效应对忆阻系统的影响。同时，设计了基于Matlab的图形用户界面，直观地展示了不同参数下的耦合特性曲线。进一步，本文展示了有无耦合情况下，初始阻值对忆阻器正常工作范围的影响。最后，构建耦合忆阻器的Pspice仿真器，从电路的角度再次验证了忆阻器间的耦合效应。实验结果表明:同极性耦合增强了阻值的改变，相反极性的耦合减缓了阻值的改变。这些动力学特性可以很好地应用于忆阻网络中，也为全面考虑忆阻系统电路的设计提供了强大的理论基础。