White Light-Emitting Diode From Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film

A whole interfacial transition of electrons from conduction bands of n-type material to the acceptor levels of p-type material makes the energy band engineering successful. It tunes intrinsic ZnO UV emission to UV-free and warm white light-emitting diode (W-LED) emission with color coordinates around (0.418, 0.429) at the bias of 8-15.5 V. The W-LED is fabricated based on antimony (Sb) doped p-ZnO nanowire arrays/Si doped n-GaN film heterojunction structure through one-step chemical vapor deposition with quenching process. Element analysis shows that the doping concentration of Sb is = 1.0%. The I-V test exhibits the formation of p-type ZnO nanowires, and the temperature-dependent photoluminescence measurement down to 4.65 K confirms the formation of deep levels and shallow acceptor levels after Sb-doping. The intrinsic UV emission of ZnO at room temperature is cut off in electroluminescence emission at a bias of 4-15.5 V. The UV-free and warm W-LED have great potential application in green lights program, especially in eye-protected lamp and display since television, computer, smart phone, and mobile digital equipment are widely and heavily used in modern human life, as more than 3000 h per year.

电子从n型材料的导带完全界面跃迁到p型材料的受主能级，使得能带工程取得成功。它将本征氧化锌的紫外发射调节为无紫外且暖白光发光二极管（W - LED）发射，在8 - 15.5 V的偏压下色坐标约为(0.418, 0.429)。这种W - LED是通过带有淬火工艺的一步化学气相沉积法，基于锑（Sb）掺杂的p - ZnO纳米线阵列/硅掺杂的n - GaN薄膜异质结结构制备的。元素分析表明，Sb的掺杂浓度为1.0%。I - V测试显示出p型ZnO纳米线的形成，低至4.65 K的温度相关光致发光测量证实了Sb掺杂后深能级和浅受主能级的形成。在4 - 15.5 V的偏压下，电致发光发射中截断了室温下ZnO的本征紫外发射。无紫外且暖白光的W - LED在绿色照明计划中具有巨大的潜在应用，特别是在护眼灯和显示器方面，因为电视、计算机、智能手机和移动数字设备在现代人类生活中被广泛大量使用，每年使用时间超过3000小时。