Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures

15-kV-class 4H-SiC PiN diodes with various junction termination structures have been experimentally investigated. Employment of the space-modulated junction termination extension (SM-JTE) and the two-zone JTE have realized a breakdown voltage over 15 kV, corresponding to 93% of the parallel-plane breakdown voltage. The window of the implanted JTE dose to achieve the ultrahigh voltage has been enlarged, which indicates the robustness to the deviation of effective JTE dose. From the comparison of the experimental JTE-dose dependence of breakdown voltage with the numerical device simulation, a shift toward the heavier JTE-dose region was observed. To explain the phenomenon, effects of the charges at the SiO2/SiC interface are discussed.

对具有各种结终端结构的15 - kV级4H - SiC PiN二极管进行了实验研究。采用空间调制结终端扩展（SM - JTE）和双区JTE实现了超过15 kV的击穿电压，相当于平行平面击穿电压的93%。实现超高电压的注入JTE剂量窗口已扩大，这表明对有效JTE剂量偏差具有鲁棒性。通过将击穿电压的实验JTE剂量依赖性与器件数值模拟进行比较，观察到向更高JTE剂量区域的偏移。为了解释这一现象，讨论了SiO₂/SiC界面处电荷的影响。