320×256元InAs/GaSb II类超晶格中波红外双色焦平面探测器

The preliminary results of a 320×256 -pixel InAs/GaSb type - II superlattice infrared dual - color focal plane array detector are reported. The detector adopts a PN - NP stacked dual - color epitaxial structure, and the signal extraction uses a sequential readout method. The superlattice materials are grown on a GaSb substrate by molecular beam epitaxy technology. The superlattice periodic structures in the dual - band infrared absorption regions are 7 ML InAs/7 ML GaSb and 10 ML InAs/10 ML GaSb respectively. The center distance between the pixels of the focal plane array is 30 μm. When tested at 77 K, the 50% response cutoff wavelengths of the two color bands of the device are 4.2 μm and 5.5 μm respectively, and the average peak detectivity of the N - on - P device reaches 6.0×10^(10) cmHz~（此处似乎不完整）

报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10~（10） cmHz~