Microstrip-to- Waveguide Transition with Bias Tee for Photodiode Packaging at W-Band

This paper presents a novel concept for the integration of terahertz (THz) photodiodes (PD) with rectangular waveguide. The device features a bias tee and an E-plane microstrip-to-waveguide transition. The bias tee can prevent the leakage of the RF power while applying DC bias to the PD. The E-plane probe achieves power coupling from the microstrip to the WR-10 waveguide. The insertion loss of the full module is less than 0.2dB, and the RF isolation at the DC port is better than 17 dB over the whole W-band (75-110GHz). The transition features low loss and can be applied to the packaging of THz PDs to achieve an efficient connection between PD and rectangular waveguide.

本文提出了一种将太赫兹（THz）光电二极管（PD）与矩形波导集成的新颖概念。该器件具有一个偏置三通和一个E面微带 - 波导过渡结构。偏置三通在给光电二极管施加直流偏置时能够防止射频功率泄漏。E面探针实现了从微带到WR - 10波导的功率耦合。整个模块的插入损耗小于0.2dB，并且在整个W波段（75 - 110GHz）内直流端口的射频隔离度优于17dB。这种过渡结构具有低损耗的特点，可应用于太赫兹光电二极管的封装，以实现光电二极管与矩形波导之间的高效连接。