基于Spiro-OMeTAD电子阻挡层的量子点发光二极管电荷平衡改善

Aiming at the charge imbalance problem caused by the difference in mobility between the hole transport layer and the electron transport layer of quantum dot light-emitting diodes, an organic polymer Spiro - OMeTAD film with a high energy level of the lowest unoccupied molecular orbital is placed between the hole transport layer and the quantum dot light-emitting layer to block the transmission of excess electrons from the quantum dot light-emitting layer to the hole transport layer and promote the charge balance of the device, thus preparing an efficient new type of green quantum dot light-emitting diode. The results show that compared with traditional devices, the external quantum efficiency of the new green quantum dot light-emitting diode device is increased by 87% to 11.87%, and the brightness is increased by 106% to 53055 cd/m²; blocking the transmission of excess electrons can significantly improve the charge imbalance phenomenon in the device.

针对量子点发光二极管空穴传输层和电子传输层的迁移率差异而导致的电荷不平衡问题,将具有最低未占分子轨道高能级的有机聚合物Spiro-OMeTAD薄膜放置在空穴传输层与量子点发光层之间,阻挡过剩电子由量子点发光层向空穴传输层的传输,促进器件的电荷平衡,制备出一种高效的新型绿色量子点发光二极管。结果表明:相比于传统器件,新型绿色量子点发光二极管器件的外部量子效率提升了87%,达到11.87%,亮度提升了106%,达到53055 cd/m~2;阻挡过剩电子的传输可以显著改善器件中的电荷不平衡现象。