Chemically Roughened, Sputtered Au Films with Trace-Loaded Manganese Oxide for both On-Chip and Off-Chip High Frequency Supercapacitors.

High frequency supercapacitors (HFSCs) are promising in alternating current line filtering and adaptable storage of high-frequency pulse electrical energy. Herein, we report a facile yet integrated-circuit-compatible fabrication of HFSC electrodes by combining chemical roughening of the sputtered metal (Au) films and in situ trace loading of a pseudocapacitive material (MnOx). The developed electrode fabrication route is versatile for different substrates, and is described with the application paradigms of both on-chip (with Si/SiO2 substrate) and off-chip (without Si/SiO2 substrate, with Ti substrate as an example in this study) HFSCs. With Au/MnOx films on Si/SiO2 substrates as the working electrodes, the derived on-chip HFSC displayed satisfactory performance in high frequency applications (i.e., an areal capacitance of 131.7 µF cm−2, a phase angle of −78°, and a RC time constant of 0.27 ms, at 120 Hz).

高频超级电容器（HFSCs）在交流线路滤波以及高频脉冲电能的适应性存储方面具有良好前景。在此，我们报道了一种简便且与集成电路兼容的高频超级电容器电极制造方法，该方法将溅射金属（金）膜的化学粗糙化与赝电容材料（氧化锰）的原位微量负载相结合。所开发的电极制造方法适用于不同的基底，并通过片上（以硅/二氧化硅基底）和片外（无硅/二氧化硅基底，本研究以钛基底为例）高频超级电容器的应用范例进行了描述。以硅/二氧化硅基底上的金/氧化锰薄膜作为工作电极，所得到的片上高频超级电容器在高频应用中表现出令人满意的性能（即在120Hz时，面积电容为131.7 µF/cm²，相位角为 - 78°，RC时间常数为0.27 ms）。