Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

Much research has been devoted to the incorporation of erbium (Er) into semiconductors aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to be an excellent host material for Er ions due to its structural and thermal stability. Er-doped GaN (GaN:Er) epilayers were grown on different templates, GaN/Al2O3, AlN/Al2O3, GaN/Si (111), and c-GaN bulk. The effects of stress on 1.54 μm emission intensity, caused by lattice mismatch between the GaN:Er epilayer and the substrate, were probed. The emission intensity at 1.54 μm increased with greater tensile stress in the c-direction of the GaN:Er epilayers. These results indicate that the characteristics of photonic devices based on GaN:Er can be optimized through strain engineering.

大量研究致力于将铒（Er）掺入半导体中，旨在实现具有多种功能的光子集成电路。由于其结构和热稳定性，氮化镓（GaN）似乎是铒离子的一种优良基质材料。在不同的模板上生长了掺铒氮化镓（GaN:Er）外延层，这些模板包括GaN/Al₂O₃、AlN/Al₂O₃、GaN/Si（111）和块状c - GaN。研究了由GaN:Er外延层和衬底之间的晶格失配所导致的应力对1.54μm发射强度的影响。在GaN:Er外延层的c方向上，拉伸应力越大，1.54μm处的发射强度越高。这些结果表明，基于GaN:Er的光子器件的特性可以通过应变工程进行优化。