Uniformity of device performance improvement for the SOT-MRAM by optimizing the lithography process at 200-mm-wafer manufacturing platform

We examined the influence of process uniformity on the device performance for the spin-orbit torque (SOT) magnetic random access memory (MRAM) devices. By optimizing the lithography process through changing the multi-energies exposure compensation and pretreatment in developing, we demonstrated 1.6 times sigma improvement of the critical dimensions (CD), leading to 49.5%, 54.2%, and 63.2% sigma% reduction for SOT channel resistance (Rb), magnetic tunnel junction (MTJ) resistance (Rmin) and switching current (IC) respectively. These promising results will help to deliver SOT-MRAM to the mass manufacturing in the semiconductor industry.

我们研究了工艺均匀性对自旋轨道矩（SOT）磁随机存取存储器（MRAM）器件性能的影响。通过改变多能量曝光补偿以及显影中的预处理来优化光刻工艺，我们实现了关键尺寸（CD）的1.6倍西格玛提升，使得SOT沟道电阻（Rb）、磁隧道结（MTJ）电阻（Rmin）和切换电流（IC）的西格玛百分比分别降低了49.5%、54.2%和63.2%。这些有前景的结果将有助于在半导体行业实现SOT - MRAM的大规模制造。