辐照环境下高介电常数栅介质的损伤机理研究

According to the need for more developed anti-irradiation property of very deep submicron level electronic system, targeted to study the damage law and establish the damage mechanism model of high-k gate dielectrics and structures under irradiation, this project will study the microscopic-mesoscopic-macroscopic properties of electronic devices before and after γ-ray、X-ray irradiation. Firstly, from the perspective of electron/charge, the dielectric properties of high-k dielectric of very deep submicron level under irradiation will be studied in detail, the electron transition and carrier transport property in gate dielectrics and the quantum size effect on the interface between dielectric material and semiconductor as well as the interface between composite dielectrics of multilayer structures will also be researched. Secondly, through the study of the damage law of typical high-k materials and structures under irradiation, the mechanism of action of total dose irradiation effect and dose rate effect on very deep submicron level electronic devices will be explored. Thirdly, the damage law of typical electronic devices prepared on the standard production line under irradiation will be studied. Base on the study of microscopic-mesoscopic-macroscopic scale, the theories and models derived from this project are expected to enrich and develop the damage theory of VDSM electronic devices under irradiation, and finally provide efficient theoretical foundation and critical technology for the radiation hardening of electronic devices in the aerospace and military hardware.

针对超深亚微米电子系统抗辐照性能提高的需要，以认识新型高k栅介质材料与结构的辐照损伤规律、建立新型高k栅介质材料及结构的辐照损伤物理模型为目标，从电子/电荷的角度，重点研究辐照环境作用下新型高k栅介质材料的介电效应，认识辐照环境下多种新型高k栅介质材料中电荷产生、复合、输运特性，认识辐照环境下半导体与绝缘材料复合界面和多层结构复合介质界面的量子尺寸效应；通过研究辐照环境下超深亚微米电子器件典型结构的失效与破坏本征规律，认识辐射环境对新型高k电子系统典型结构损伤演变的作用机制；通过研究辐照环境下新型高k超深亚微米电子器件的损伤破坏规律，丰富与发展新型超深亚微米电子器件的辐照损伤理论，为航空航天及武器装备用电子设备的抗辐照加固提供重要的理论依据和关键技术。

针对超深亚微米电子系统抗辐照性能提高的需要，使用原子层淀积方法在硅衬底上制备得到了不同厚度的高k栅介质及其MOS结构开展了总剂量辐照损伤特性研究，研究了高k栅介质/Si介质系统中辐照致陷阱电荷特性和泄漏电流特性，以及辐照后高k栅介质的化学结构损伤和高k栅介质/Si介质系统中的辐照致陷阱特性。通过系统研究辐照在高k栅介质/Si系统中产生的氧化层及界面层陷阱电荷量变化特性，发现退火过程及SiO2缓冲层的存在对辐照致陷阱电荷产量有明显影响。通过研究高k栅介质/Si系统中辐照对氧化层陷阱和界面层陷阱的影响规律，发现通过ALD制备得到的高k栅介质内部缺陷主要为氧空位，而高k栅介质/Si界面处的界面态主要包括硅氧悬挂键、悬挂键及硅的低价氧化物，辐照导致硅悬挂键和低价硅氧键数量增加。项目组给出了高k栅介质及其MOS结构在辐照作用下损伤的物理过程描述。通过研究辐照环境下新型高k超深亚微米电子器件的损伤破坏规律，可以丰富与发展新型超深亚微米电子器件的辐照损伤理论，为航空航天及武器装备用电子设备的抗辐照加固提供重要的理论依据和关键技术。

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