基于高压CMOS工艺的像素探测器关键技术研究

Monolithic silicon pixel detector has always been the research emphasis in the field of high-energy physics, and has wide application prospects in synchrotron radiation, particle detection, X-ray imaging and so on. As a novel monolithic silicon pixel detector, pixel detector implemented in high-voltage CMOS technology has many advantages, such as low-cost, strong antiradiation damaging feature, high precision time measurement, hence is supposed to be an alternative approach to be the particle detector in ATLAS\LHC projects. However, the research of the pixel detector in high-voltage CMOS technology is few and always fasten on particle detector, especially, there is few or no such study in China. This project will do researches on key technologies of pixel detector in high-voltage CMOS technology, including researches on fabrication and properties of sensors in the detector, the front-end amplifier, filter circuit, discriminator integrated in pixel, detector having large array structure. The goal of the project is the completion of the prototype of the monolithic silicon pixel detector implemented in high-voltage CMOS technology with electronics system in the pixels and array structure, and analysis on the test of properties of the detector. Meanwhile, the applications of the detector in CEPC project and synchrotron radiation facility will be studied.

单片式的硅像素探测器件一直是高能物理领域的研究重点，在同步辐射、高能粒子探测、X射线成像等领域具有很广泛的应用前景。基于高压CMOS工艺的像素探测器作为一种新型的单片式、像素探测器，具有成本低、抗辐照能力强、时间精度高的优点，被认为是ATLAS、LHC等工程上可被采用的一种粒子探测器。目前国际上关于基于高压CMOS工艺的探测器的研究仍较少且集中于粒子探测器方面，国内关于这方面的研究仍处于空白。本课题对基于高压CMOS工艺的探测器关键技术问题开展深入分析和研究，包括探测器件制备与性能研究、像素内集成前放、滤波、甄别器电路的研究、具有一定阵列结构的探测器研究。在分别对探测器件仿真、制备和性能验证，像素内集成电子学电路研究的基础上，设计并完成像素内集成电子学电路的、具有像素阵列的、基于高压CMOS工艺的探测器原型，并对其性能进行测试分析；同时进一步探索将该探测器应用至CEPC、同步辐射等领域。

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