基于室温高电子迁移率晶体管的太赫兹外差混频探测器研究

At room temperature, high-sensitivity and high-speed terahertz detection is usually realized by using the specially designed Schottky diodes. However, the superior sensitivity of a Schottky diode degrades as the frequency of detection is above 0.65 THz. At this moment, it is challenging to further improve the sensitivity in the terahertz regime. Based on our previous research on high-sensitivity self-mixing detectors at room temperature, we are stepping further towards ultra-high sensitivity heterodyne detectors based on the field-effect mixing. The goal of this project is to obtain a systematic knowledge base for future development of field-effect terahertz mixers. Hence, we will elaborately design and conduct experiments to reveal the mixing mechanism in field-effect electron channel and construct a proper device model. Meanwhile, the techniques of device fabrication, integration and characterization will be developed.

室温下高速、高灵敏度的太赫兹检测通常由特殊的肖特基二极管检测器来实现。然而，随着探测频率提高至0.65 THz以上时，肖特基二极管探测器的灵敏度迅速降低。目前，我国还没有完全掌握该类特殊肖特基二极管的制备技术。本项目面向0.65 THz以上的太赫兹成像及通信应用，在前期已发展的1.0 THz室温、高灵敏度太赫兹自混频探测器的基础上，进一步研究室温下的超高灵敏度外差式混频探测器技术。以场效应调控的GaN/AlGaN二维电子气中外差混频的物理机制、混频探测的器件物理模型、混频器及其外差探测模块的加工集成技术和相应的测试、表征与定标技术为主要研究内容。通过本项目的实施，获得系统的场效应混频探测器的设计与制备技术，缩小我国在室温、高速和超高灵敏度太赫兹探测器及其应用技术领域与国外先进技术的差距。