高灵敏度W波段狄克辐射计硅基集成芯片研究

W-band imaging system has been widely used in systems for space, security, sensing, diognastic etc. But the imaging systems based on GaAs or InP radiometer chips usually suffer cost and compactivity issues, which handicap the application of imaging systems that need to integrate hundards of radiometer chips. In contrast, the radiometer chips fabricated on silicon can make the imaging sytem smaller, lighter and consume less power. Therefore, the research on silicon-based W-band radiometer becomes a research hotspot recently. However, limited by the characteristics of high frequency circuits on silicon processes, W-band Dicke radiometer encounter the issue of low sensitivity. In this project, novel circuit techniques will be developed to improve the performance of each sub-block like calibration circuit, low noise amplifier and power detector. Through the above research, the project is expected to enhance the sensitivity of the silicon-based Dicke radiometer effectively.

W波段成像系统广泛地应用于航天，安检，遥感，医疗诊断等领域。但在GaAs或者InP基片上制造面临成本高、不易集成的问题，限制了通常需要数以百计辐射计芯片的成像系统的应用。而使用硅基辐射计芯片可以使成像系统体积更小、重量更轻、功耗更低。因此W波段硅基辐射计芯片近年来成为研究热点。但受限于硅工艺的高频特性，硅基W波段的狄克辐射计面临灵敏度低的问题。本项目将采用新型的电路结构设计来提高校准电路、低噪声放大器以及功率探测器等各子模块芯片的性能。通过以上研究，以期有效提高狄克辐射计硅基芯片的灵敏度。