聚合物p-n结发光晶体管

Organic polymer light emitting transistors (OLETs) have attracted great scientific and industrial attention due to their unique advantages over traditional inorganic crystalline devices such as low fabrication cost, light weight, and high mechanical flexibility. On the other hand, the low charge carrier mobility and inefficient charge transport in the intrinsic conjugated polymers ultimately limit the device efficiency. The polymer p-n junctions built by electrochemical doping offer a completely new approach to the high performance of devices. In this project, the electrochemical doping will be carried out to form a polymer p-n junction based OLETs. These p-n junction devices utilize the intrinsic region of the conjugated polymer to emit light and the highly conductive doped region of the same conjugated polymers to transport charge carriers. Meanwhile, multiple p-n junction (bulk homojunction) OLETs can be achieved by adding conductive particles into the polymer film, resulting in a large active light-emitting area. Finally, the polymer p-n junction devices controlled by gate electrode will be used to investigate the underlying operating mechanism through electrical and optical mapping and probing techniques.

有机聚合物发光晶体管(OLET)因其独特的优点受到学术界和工业界的广泛重视，但有机聚合物材料的低载流子迁移率一直是制约器件效率提高的瓶颈。本项目通过电化学掺杂的方式构建聚合物p-n结，从而实现与无机半导体器件相类似的具有同质结结构的聚合物发光晶体管器件。这种器件因电化学掺杂使得n-和p-区的电导显著提高，在薄膜与电极之间形成了近似欧姆接触，从而在单有机聚合物半导体功能层上实现高性能发光晶体管器件。更重要的是，电化学掺杂可以制备具有大尺寸沟道的平面聚合物发光晶体管，结合光电性能测试，我们可以直接研究栅极对电化学掺杂的影响，从而明确聚合物p-n结晶体管的工作原理。此外通过掺入导电颗粒在沟道内形成大量随机p-n结，利用微小p-n结串联效果制备出类面发光的高发光面积占空比的聚合物发光晶体管器件。

有机聚合物晶体管因其独特的优点受到学术界和工业界的广泛重视，但有机聚合物材料的低载流子迁移率一直是制约器件效率提高的瓶颈。本项目针对如何提聚合物晶体管性能开展研究，并探索了利用电化学掺杂制备n-,p-区，制备聚合物发光晶体管，在项目实施的四年中，系统的针对晶体管的活性层，绝缘介电层，电解质栅极，发光层等展开了研究。首先分别通过制备复合介电层以及采用混合溶剂制备介电层来实现高性能晶体管器件；还通过提高聚合物活性层内结晶以及在聚合物活性层中引入钙钛矿纳米片，从而显著提升器件性能；同时，分别利用液体电解质与固体电解质，成功制备了电化学晶体管，并研究了电解质对晶体管性能的影响；此外，还研究了电化学发光池中影响电致发光的因素；最后，结合以上研究成果，成功制备了电化学发光晶体管，实现本项目的预定目标，为柔性发光器件的集成提供了有意义的尝试。

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