硅基毫米波片上电感优化设计与传递函数基可缩放建模方法研究

With the continuous development of silicon CMOS process, it is possible to implement millimeter wave (mmW) integrated circuits on silicon based processes which are much cheaper instead of III-V compound semiconductor processes. The lack of high performance on-chip inductors and high-precision models for inductors with scalable fitting ability has become one of the key problems to restrict the development of silicon based millimeter wave integrated circuit and high performance System on Chip (SoC). Our research group is committed to reveal the method for restraining the parasitic effect of silicon based mmW on-chip spiral inductor, transmission line and fractal inductors through the analysis of skin effect, substrate effect and proximity effect and achieve the performance improvement for silicon based mmW on-chip inductors, promote silicon based millimeter wave integrated circuit miniaturization. The poles and zeros of the transfer function determine the performance and the key features of the circuit network, such as phase, gain and bandwidth. Through the analysis of transfer function, the electrical characteristics of circuit network can be revealed and the guidance and basis may be provided for establishing the components model with high precision and broadband fitting ability. The mechanism that the poles and zeros of the transfer function change with the physical dimensions of the passive spiral components is still unknown. Our research group tries to reveal this mechanism by the analysis of transfer function for passive components, and establish the mmW models of on-chip inductors with high-precision and scalable fitting ability, so as to lay a foundtion for the development ofthe monolithic millimeter-wave integrated circuit.

随着CMOS工艺的不断发展，毫米波技术开始从III-V族化合物工艺转向价格低廉的硅基工艺。缺乏高性能片上电感与毫米波电感可缩放模型成为制约硅基毫米波集成电路发展与高性能芯片系统小型化的关键问题。本课题拟通过硅基毫米波片上电感趋肤效应、衬底损耗与邻近效应等特性分析，揭示抑制硅基毫米波片上螺旋电感、传输线电感与分形电感寄生效应的方法，实现高性能硅基毫米波片上电感的设计，促进硅基毫米波集成电路小型化发展。传递函数零极点与电路网络的相移、增益和带宽等重要电学特性密切相关，通过传递函数分析能够揭示电路网络电学特性的本质，为建立高精度、宽频带无源元件模型提供指导和依据。硅基片上电感传递函数零极点随元件物理尺寸变化机制不详，本课题组拟通过片上电感传递函数分析，揭示不同尺寸元件传递函数零点与极点随物理尺寸的变化规律，建立高精度片上电感毫米波尺寸可缩放模型，为毫米波集成电路发展奠定一定的基础。

缺乏高性能片上电感成为制约硅基毫米波集成电路发展与高性能芯片系统实现的关键问题。本项目通过对硅基毫米波片上电感趋肤效应、衬底损耗与邻近效应等特性分析，提出了希尔伯特分形曲线型地屏蔽层与多路径交叉连接技术实现了高性能片上差分电感与单端电感设计，提高了片上电感的品质因数。本项目设计了折叠条型人工电磁结构以及半模慢波基片集成波导结构实现高性能超宽带天线设计。本课题实现了片上螺旋电感物理基模型、矢量拟合技术模型与神经网络模型建模过程，引入神经网络空间映射技术，建立了高精度宽频带片上螺旋电感可缩放模型。本项目采用传递函数方法建立了片上螺旋电感高精度宽频带模型，并通过电磁仿真，验证了传输线去嵌技术能够去除金属引线的影响，比开路去嵌技术精度更高。本项目设计的高性能片上电感与提出的片上螺旋元件宽频带模型对于毫米波电路设计具有重要实用意义。项目资助发表SCI收录论文4篇，EI收录论文4篇，待发表论文2篇。项目投入经费25万元，支出21.2114万元，剩余经费3.7886万元，计划用于本项目研究后续支出。

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