半导体像素探测器读出ASIC的设计及性能研究

As the exploring to the matter world steps deeper and further, the requirement of detector performances for High Energy Physics and Particle Physics is getting increasingly critical. Silicon pixel detectors has been widely used as vertex detectors in most of the high energy physics experiments, because of its excellent behavior in energy resolution, noise, counting ability and its low mass of material. In the field of medical and astronomy observation, silicon pixel detector also has a broad prospect. However, due to the restriction of domestic design level and process, the study of its key technique - High Density Front-end Readout ASIC for Silicon Pixel Detectors, has not been developed yet, thus the extensive application of silicon pixel detectors in the field of high energy physics in China still remains totally blank. In order to fulfill the requirements for the future domestic high energy physics experiments, and also to retain a place for China in the international high energy physics research, it is the irresistible trend to launch the research of pixel detector readout circuit. The goal of this project is to study all the key techniques in pixel readout chip, on this basis to design a pixel detector ASIC with self-owned intellectual property rights, and then to design a prototype system and perform measurements thoroughly. Therefore the design principle and core techniques can be mastered, and it is expected to establish a foundation for the future application of pixel detectors in large-scale.

随着人类对物质探索的不断深入，高能物理和粒子物理对探测器的性能要求越来越高。半导体像素探测器以其良好的能量分辨率、噪声水平、高计数率工作能力以及较低的物质量，广泛用于世界上各大高能物理实验中顶点探测器。在医学、天文观测等领域，半导体像素探测器也有广泛的应用前景。然而由于国内的设计水平和工艺限制，其中的关键技术- - 用于半导体像素探测器的高密度前端读出专用集成电路的研究还没有开展，在国内高能物理领域，半导体像素探测器的大规模应用还是空白。为满足今后国内高能物理实验的需要，为中国在国际高能物理领域继续保有一席之地，开展半导体像素探测器读出电路的研究可谓大势所趋。本项目的目标是研究像素读出芯片设计中的各项关键技术，在此基础上完成具有自主知识产权的像素探测器专用集成电路设计，完成像素探测器样机系统设计并进行全面测试，从而掌握像素读出芯片设计方法和关键技术，为半导体像素探测器的大规模应用打下基础。