基于电压调控自旋轨道矩效应的新一代自旋电子电路研究

Recently, spintronics-based integrated circuits (SIC) have received extensive attention from the academia and industry, which is considered as one of the key technologies to break through the power consumption bottleneck of the traditional integrated circuits. So far, the research focus of the SIC is to employ the spin transfer torque based magnetic tunnel junction (STT-MTJ) for non-volatile memory and logic circuits design. However, according to our previous research investigation, the SIC with the STT-MTJ suffer from the severe speed and power consumption bottleneck. Fortunately, the voltage gated spin-orbit torque (VGSOT) effect that is discovered by the latest experiments have great potential to solve these issues. In this project, we will study the next-generation SIC with the VGSOT-MTJ from the three aspects of device physics, device modeling and circuit design, aiming to achieve ultra-high speed, ultra-low power consumption and ultra-high integration. Firstly, we will study the physical mechanism and behavior characteristics of the VGSOT-MTJ and then build its physical model. Secondly, we will develop an SPICE model of the VGSOT-MTJ for the following SIC design. Finally, we will explore the design, analysis and applications of the next-generation SIC with the VGSOT-MTJ. The research results of this project have important scientific significance and industrial application value for the development of integrated circuits in China.

近年来，自旋电子电路受到了学术界和工业界的广泛重视，被认为是可以突破当前传统集成电路功耗瓶颈的关键技术之一。目前，自旋电子电路研究主要是利用自旋转移矩磁隧道结（STT-MTJ）进行非易失存储与逻辑电路设计。但前期研究发现基于STT-MTJ的自旋电子电路面临着严重的速度和功耗瓶颈，而最新研究发现的电压调控自旋轨道矩（VGSOT）效应有望解决这些问题。因此，本项目将以VGSOT-MTJ为基元，从器件物理、器件建模、电路设计三个层面开展跨层联合研究，旨在实现新一代超快、超低功耗、超高集成度自旋电子电路。首先，研究VGSOT-MTJ的物理机制与行为特性，并进行理论建模；其次，构建一个准确且高效的VGSOT-MTJ SPICE模型，为后续电路设计提供基础；最后，开展基于VGSOT-MTJ的新一代自旋电子电路设计、分析与应用研究。本项目的研究成果将对我国集成电路发展具有重要的科学意义和产业应用价值。

近年来，自旋电子电路受到了学术界和工业界的广泛重视，被认为是可以突破当前传统集成电路功耗瓶颈的关键技术之一。本项目以新一代电压调控自旋轨道矩磁隧道结（VGSOT-MTJ）为基元，从器件物理、器件建模、电路设计三个层面开展跨层联合研究，取得的主要研究成果如下：. 1、阐明了电压调控自旋轨道矩效应驱动磁隧道结实现无外场辅助确定性磁化状态翻转的物理机制及行为特性；. 2、构建了一个准确且高效的VGSOT-MTJ SPICE模型，并将其开源发布在北航集成电路学院创建的SpinLib网站（http://spinlib.com），目前已被下载1000余次，为项目后续自旋存储与逻辑电路设计奠定了基础；. 3、设计了7类超快、超低功耗、超高集成度及高可靠自旋存储与逻辑电路原型，分别为自旋非易失性静态存储器单元电路、自旋非易失性触发器单元电路、自旋非易失性内容可寻址存储器单元电路、自旋强物理不可克隆函数电路、自旋真随机数发生器电路、高可靠抗单粒子翻转磁存储器读电路以及自旋神经形态电路。. 本项目研究成果对推导我国集成电路发展具有重要的科学意义和产业应用价值。

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