MAGNETOTRANSPORT IN GRAPHENE, SILICENE, AND TOPOLOGICAL INSULATORS: INFLUENCE OF ELECTRON-ELECTRON CORRELATIONS

石墨烯、硅烯和拓扑绝缘体中的磁输运：电子-电子相关性的影响

• 批准号: 121756-2013
• 负责人: Vasilopoulos, Panagiotis
• 金额: $ 1.31万
• 依托单位: Concordia University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2017
• 资助国家: 加拿大
• 起止时间: 2017-01-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=633496
• 关键词: MAGNETOTRANSPORT; GRAPHENE; SILICENE; TOPOLOGICAL; INSULATORS

The main areas of the proposed research will be: A. FRACTIONAL QUANTUM HALL EFFECT IN GRAPHENE, COULOMB DRAG BETWEEN GRAPHENE AND A SEMICONDUCTOR LAYER. B. STRAIN-INDUCED SPIN-ORBIT INTERACTION (SOI) IN GRAPHENE, TRANSPORT IN SILECENE. C. TOPOLOGICAL INSULATORS.A. i) Carriers in graphene, the atomically thick, two-dimensional (2D) version of graphite, behave like relativistic massless particles with the "speed of light" replaced by the very high Fermi velocity (~106 m/s), transmit perfectly through barriers (Klein paradox), show an unconventional quantum Hall effect (QHE), etc.. We will thoroughly study electron transport in single-layer or bilayer graphene in the fractional QHE regime and assess the influence of the electron-electron interaction using linear-response theory. ii) We will study momentum transfer, i.e., the Coulomb drag, between graphene and a spatially separated semiconductor 2D layer or another graphene layer on a substrate. B. Applying a strain to graphene changes the interatomic distances and leads to a rehybridization between different orbitals and an enhanced SOI. We will study spin-dependent transport due to i) strain-induced SOI in graphene, and ii) SOI in a monolayer of silicon, called silicene, a material similar to graphene but with a gap at the Dirac point, a linear spectrum near it, and very strong SOI. C. Topological insulators are materials that are insulators in the bulk but possess surface conducting states. We will study the influence of electron-electron correlations on the transport properties of graphene microstructures and topological insulators using linear-response theory and binary scattering rates that account for exchange. We will also search for topological states in strained graphene including SOI.

拟议研究的主要领域是： A. 石墨烯中的分数量子霍尔效应、石墨烯和半导体层之间的库仑阻力。 B. 石墨烯中应变诱导的自旋轨道相互作用 (SOI)，硅烯中的传输。 C. 拓扑绝缘体。 i) 石墨烯（石墨的原子厚度、二维 (2D) 版本）中的载流子，表现得像相对论无质量粒子，“光速”被非常高的费米速度 (~106 m/s) 取代，完美地传输通过势垒（克莱因悖论），表现出非常规的量子霍尔效应（QHE）等。我们将深入研究分数 QHE 体系中单层或双层石墨烯的电子传输，并评估量子霍尔效应的影响使用线性响应理论的电子-电子相互作用。 ii）我们将研究石墨烯与空间分离的半导体二维层或基板上的另一个石墨烯层之间的动量传递，即库仑阻力。 B. 对石墨烯施加应变会改变原子间距离并导致不同轨道之间的重新杂化和增强的 SOI。我们将研究自旋相关输运，原因如下：i) 石墨烯中应变诱导的 SOI，以及 ii) 单层硅（称为硅烯）中的 SOI，硅烯是一种类似于石墨烯的材料，但在狄拉克点（靠近狄拉克点的线性光谱）处有一个间隙，以及非常强的SOI。 C. 拓扑绝缘体是整体上是绝缘体但具有表面导电状态的材料。我们将利用线性响应理论和考虑交换的二元散射率研究电子-电子相关性对石墨烯微结构和拓扑绝缘体输运特性的影响。我们还将寻找应变石墨烯中的拓扑状态，包括 SOI。