Investigation of the role of isolation-feature geometry in improving the threshold-voltage adjustability and power-handling of polar III-Nitride HFETs, and physics-based modeling of the gate-current

研究隔离特征几何形状在改善极性 III 氮化物 HFET 的阈值电压可调性和功率处理方面的作用，以及基于物理的栅极电流建模

• 批准号: RGPIN-2015-03866
• 负责人: Valizadeh, Pouya
• 金额: $ 1.6万
• 依托单位: Concordia University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2015
• 资助国家: 加拿大
• 起止时间: 2015-01-01 至 2016-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=589433
• 关键词: Investigation; role; isolation; feature; geometry

Over the past two decades research on wide-bandgap polar AlGaN/GaN heterostructure field effect transistors (HFETs) has resulted in a rapidly growing market in the area of high-frequency/high-power transistors. As the share of this market is inching towards the billion-dollar mark, innovative solutions for improving the transistors’ power-handling/heat-management, and for reliable realization of both enhancement- and depletion-modes of operation (i.e. having a positive and negative threshold-voltage, respectively) are gaining a more prominent status.

在过去的二十年中，对宽带极性极性Algan/GAN异质结构效应晶体管（HFET）的研究导致高频/高功率晶体管领域的市场迅速增长。随着该市场的份额朝着十亿美元的成绩迈进，用于改善晶体管的电力处理/热管理的创新解决方案，以及可靠地实现增强和耗尽操作模式（即，分别具有积极的和负阈值电压），正在提高出色的状态。