Investigation of strain-engineering techniques for modification of the characteristics of FETs in polar III-nitride material system and analytical modeling of device peculiarities

研究用于修改极性 III 氮化物材料系统中 FET 特性的应变工程技术以及器件特性的分析建模

• 批准号: 372071-2010
• 负责人: Valizadeh, Pouya
• 金额: $ 1.46万
• 依托单位: Concordia University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2012
• 资助国家: 加拿大
• 起止时间: 2012-01-01 至 2013-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=509394
• 关键词: Investigation; strain; engineering; techniques; modification

During the past decade, polar AlGaN/GaN heterostructure field effect transistors (HFETs) have been the focus of the device research community as alluring candidates for high power, high voltage microwave applications. High temperature stability and large breakdown voltage of wide-bandgap AlxGa1-xN material system, promote the applicability of AlGaN/GaN HFETs as vital candidates for switching applications under high-voltage/high-temperature conditions. In light of the growing demand for reliability improvement of the sensory equipment and surge in popularity of electric vehicles, power-prudent solid state electronic circuits capable of operating at temperature and voltage ranges beyond those offered by silicon technology are in demand. To the best of the PI's knowledge, a systematic investigation of the application of wide-bandgap polar III-Nitride material system to switching-mode electronics from the standpoints of process-development requirements for offering normally-off (zero current at zero gate voltage) HEFTs and challenges of reproducible fabrication of normally-off/normally-on (nonzero current at zero gate voltage) pair has not been performed. Results of this Discovery Grant proposal will lead to improved methods for analysis, design, and evaluation of solid state electronic devices and circuits in polar material systems for the efficient exploitation of the material properties of this relatively new family of electronic materials. Moreover, analytical models will be developed for incorporation of drain-current collapse and excessive gate leakage of AlGaN/GaN HFETs.

在过去的十年中，极性 AlGaN/GaN 异质结构场效应晶体管 (HFET) 一直是器件研究界的焦点，作为高功率、高压微波应用的诱人候选者。宽带隙 AlxGa1-xN 材料系统的高温稳定性和大击穿电压，促进了 AlGaN/GaN HFET 作为高压/高温条件下开关应用的重要候选者的适用性。鉴于对提高传感设备可靠性的需求不断增长以及电动汽车的普及，需要能够在超出硅技术提供的温度和电压范围下运行的节能固态电子电路。据 PI 所知，从提供常关（零栅极电压下的零电流）的工艺开发要求的角度出发，对宽带隙极性 III 族氮化物材料系统在开关模式电子器件中的应用进行了系统研究尚未执行常关/常开（零栅极电压下的非零电流）对的可重复制造的 HEFT 和挑战。该发现资助提案的结果将改进极性材料系统中固态电子器件和电路的分析、设计和评估方法，以有效利用这一相对较新的电子材料家族的材料特性。此外，还将开发分析模型来纳入 AlGaN/GaN HFET 的漏极电流崩溃和过度栅极泄漏。