Investigation of strain-engineering techniques for modification of the characteristics of FETs in polar III-nitride material system and analytical modeling of device peculiarities

研究用于修改极性 III 氮化物材料系统中 FET 特性的应变工程技术以及器件特性的分析建模

基本信息

批准号：
372071-2010
负责人：
Valizadeh, Pouya
金额：
$ 1.46万
依托单位：
Concordia University
依托单位国家：
加拿大
项目类别：
Discovery Grants Program - Individual
财政年份：
2012
资助国家：
加拿大
起止时间：
2012-01-01 至 2013-12-31
项目状态：
已结题

来源：
https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=509394
关键词：
Investigation strain engineering techniques modification

项目摘要

During the past decade, polar AlGaN/GaN heterostructure field effect transistors (HFETs) have been the focus of the device research community as alluring candidates for high power, high voltage microwave applications. High temperature stability and large breakdown voltage of wide-bandgap AlxGa1-xN material system, promote the applicability of AlGaN/GaN HFETs as vital candidates for switching applications under high-voltage/high-temperature conditions. In light of the growing demand for reliability improvement of the sensory equipment and surge in popularity of electric vehicles, power-prudent solid state electronic circuits capable of operating at temperature and voltage ranges beyond those offered by silicon technology are in demand. To the best of the PI's knowledge, a systematic investigation of the application of wide-bandgap polar III-Nitride material system to switching-mode electronics from the standpoints of process-development requirements for offering normally-off (zero current at zero gate voltage) HEFTs and challenges of reproducible fabrication of normally-off/normally-on (nonzero current at zero gate voltage) pair has not been performed. Results of this Discovery Grant proposal will lead to improved methods for analysis, design, and evaluation of solid state electronic devices and circuits in polar material systems for the efficient exploitation of the material properties of this relatively new family of electronic materials. Moreover, analytical models will be developed for incorporation of drain-current collapse and excessive gate leakage of AlGaN/GaN HFETs.

在过去的十年中，Polar Algan/GAN异质结构现场效应晶体管（HFET）一直是设备研究社区的重点，作为高功率，高压微波应用的诱人候选者。高温稳定性和宽带ALXGA1-XN材料系统的大量击穿电压促进了Algan/Gan HFET作为在高压/高温条件下切换应用的重要候选物的适用性。鉴于对电动汽车的感官设备的可靠性提高的需求不断增长，因此，能够在温度和电压范围内运行的电力固态电子电路超出了硅技术提供的电路。据PI的最佳知识，从流程开发要求的角度来看，宽带极性极性氮化物材料系统在交换模式电子设备中的应用系统调查（零门电压为零电流）和正态稳定的Zero（Zero）挑战（零栅极电压为零）（零电流）的挑战（Zero nor Zero in nonnotally Zero nor Zero not Zero dotage not Zero当前都没有进行。该发现赠款提案的结果将导致改进的方法，用于分析，设计和评估极性材料系统中的固态电子设备和电路，以有效利用这种相对较新的电子材料家族的材料特性。此外，将开发分析模型，以纳入排水 - 电流塌陷和Algan/gan HFET的闸门泄漏。