Heterogeneous semiconductors: epitaxy and electronic properties

异质半导体：外延和电子特性

• 批准号: 9387-2011
• 负责人: Masut, Remo
• 金额: $ 1.09万
• 依托单位: École Polytechnique de Montréal
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2011
• 资助国家: 加拿大
• 起止时间: 2011-01-01 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=474549
• 关键词: Heterogeneous; semiconductors; epitaxy; electronic; properties

In this proposal we focus on the vapor phase epitaxy (VPE) of heterogeneous magnetic semiconductors (MSC), such as GaP containig nanoclusters of MnP, and of quantum heterostructures (QHS) based on III-V compounds. Our main interests are to understand (i) the relationship between the inherent structure and the optical, magnetic and transport properties of the materials we grow, and (ii) how this structure is governed by the growth processes. It has recently been determined that the magnetic properties of heterogeneous MSC epilayers containing nanoclusters of magnetic materials depend on the size, crystallographic structure and orientation of the nanocluster inclusions, and protocols have been established to extract this information from the samples we grow. Yet, little is known on how to control the incorporation of these inclusions when growing from the vapor phase. Thus, one of our objectives is to establish the basic mechanisms controlling the structure by carefully designed growth experiments followed by detailed material characterization. This also applies to our ongoing study of strained QHS, including strained-layer supperlattices and stacks of layers of coherent quantum dots to which we will incorporate new dilute nitride for applications in IR photo detection, and films with nanometric inclusions for thermoelectric studies. We will grow these heterogeneous semiconductors in our laboratory, and for this purpose we have two dedicated metal organic VPE reactors where we can grow phosphides, arsenides, antimonides and dilute nitrides. We will fully characterize the epilayers ourselves or through a well established network of collaborators developed and maintained through many years. In particular, the carriers' lifetimes in many of these heterogeneous semiconductors have received little attention, yet they will be needed for applications in a variety of devices. Most of the work proposed is of a fundamental nature related to advanced materials, and devices, and it is expected to help establish the basic understanding needed for further advances in applications, such as the design of innovative devices for energy conversion and energy conservation, photon detection and optical isolation.

在此提案中，我们着重于异质磁性半导体（MSC）的蒸气相外延（VPE），例如MNP的GAP含量纳米群，以及基于IIII-V化合物的量子异质结构（QHS）的量子。我们的主要兴趣是了解（i）我们生长的材料的固有结构与光学，磁性和运输特性之间的关系，以及（ii）该结构如何受增长过程控制。 最近已经确定，含有磁性材料的纳米簇的异质MSC表层的磁力取决于纳米簇包含物的大小，晶体结构和方向，并建立了方案，以从我们种植的样品中提取这些信息。然而，关于如何控制从蒸气阶段生长的这些夹杂物的结合，知之甚少。 因此，我们的目标之一是通过精心设计的生长实验，然后进行详细的材料表征来建立控制结构的基本机制。 这也适用于我们正在进行的QHS进行的研究，包括紧张的层状乳纹状液和一层相干量子点的堆叠，我们将在其中将新的稀释氮化物纳入IR摄影检测中，以及具有热电学研究的纳米夹杂物的膜。 我们将在实验室中种植这些异质的半导体，为此，我们有两个专用的金属有机VPE反应器，我们可以在其中种植磷化物，砷，抗氧化剂和稀释氮化物。我们将自己或通过多年来开发和维护的合作者网络来充分表征姓氏。 特别是，在许多这些异质半导体中，载体的寿命很少受到关注，但是在各种设备中的应用需要它们。 提出的大多数工作都是与先进材料和设备相关的基本性质，并且有望帮助建立进一步进步的应用所需的基本理解，例如设计用于能源转换和能源保护，光子检测和光学隔离的创新设备。