Heterogeneous semiconductors: epitaxy and electronic properties

异质半导体：外延和电子特性

• 批准号: 9387-2011
• 负责人: Masut, Remo
• 金额: $ 1.09万
• 依托单位: École Polytechnique de Montréal
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2011
• 资助国家: 加拿大
• 起止时间: 2011-01-01 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=474549
• 关键词: Heterogeneous; semiconductors; epitaxy; electronic; properties

In this proposal we focus on the vapor phase epitaxy (VPE) of heterogeneous magnetic semiconductors (MSC), such as GaP containig nanoclusters of MnP, and of quantum heterostructures (QHS) based on III-V compounds. Our main interests are to understand (i) the relationship between the inherent structure and the optical, magnetic and transport properties of the materials we grow, and (ii) how this structure is governed by the growth processes. It has recently been determined that the magnetic properties of heterogeneous MSC epilayers containing nanoclusters of magnetic materials depend on the size, crystallographic structure and orientation of the nanocluster inclusions, and protocols have been established to extract this information from the samples we grow. Yet, little is known on how to control the incorporation of these inclusions when growing from the vapor phase. Thus, one of our objectives is to establish the basic mechanisms controlling the structure by carefully designed growth experiments followed by detailed material characterization. This also applies to our ongoing study of strained QHS, including strained-layer supperlattices and stacks of layers of coherent quantum dots to which we will incorporate new dilute nitride for applications in IR photo detection, and films with nanometric inclusions for thermoelectric studies. We will grow these heterogeneous semiconductors in our laboratory, and for this purpose we have two dedicated metal organic VPE reactors where we can grow phosphides, arsenides, antimonides and dilute nitrides. We will fully characterize the epilayers ourselves or through a well established network of collaborators developed and maintained through many years. In particular, the carriers' lifetimes in many of these heterogeneous semiconductors have received little attention, yet they will be needed for applications in a variety of devices. Most of the work proposed is of a fundamental nature related to advanced materials, and devices, and it is expected to help establish the basic understanding needed for further advances in applications, such as the design of innovative devices for energy conversion and energy conservation, photon detection and optical isolation.

在本提案中，我们重点关注异质磁性半导体 (MSC)（例如含有 MnP 纳米团簇的 GaP）和基于 III-V 族化合物的量子异质结构 (QHS) 的气相外延 (VPE)。我们的主要兴趣是了解（i）我们生长的材料的固有结构与光学、磁性和传输特性之间的关系，以及（ii）这种结构是如何受生长过程控制的。 最近已经确定，含有磁性材料纳米团簇的异质 MSC 外延层的磁性取决于纳米团簇夹杂物的尺寸、晶体结构和方向，并且已经建立了从我们生长的样品中提取此信息的协议。然而，人们对如何在气相生长时控制这些夹杂物的掺入知之甚少。 因此，我们的目标之一是通过精心设计的生长实验和详细的材料表征来建立控制结构的基本机制。 这也适用于我们正在进行的应变QHS研究，包括应变层超晶格和相干量子点层堆叠，我们将在其中加入新的稀氮化物以用于红外光检测应用，以及用于热电研究的具有纳米夹杂物的薄膜。 我们将在我们的实验室中生长这些异质半导体，为此，我们有两个专用的金属有机 VPE 反应器，我们可以在其中生长磷化物、砷化物、锑化物和稀氮化物。我们将自己或通过多年来开发和维护的完善的合作者网络来充分表征外延层。 特别是，许多异质半导体中载流子的寿命很少受到关注，但它们将被用于各种设备中的应用。 提出的大部分工作都具有与先进材料和设备相关的基础性质，预计将有助于建立进一步发展应用所需的基本理解，例如能量转换和节能创新设备的设计、光子检测和光学隔离。