UK Silicon Photonics

英国硅光子学

基本信息

  • 批准号:
    EP/E065317/1
  • 负责人:
  • 金额:
    $ 34.01万
  • 依托单位:
  • 依托单位国家:
    英国
  • 项目类别:
    Research Grant
  • 财政年份:
    2008
  • 资助国家:
    英国
  • 起止时间:
    2008 至 无数据
  • 项目状态:
    已结题

项目摘要

Silicon Photonics is a field that has seen rapid growth and dramatic changes in the past 5 years. According to the MIT Communications Technology Roadmap, which aims to establish a common architecture platform across market sectors with a potential $20B in annual revenue, silicon photonics is among the top ten emerging technologies. This has in part been a consequence of the recent involvement of large semiconductor companies in the USA such as Intel and IBM, who have realised the enormous potential of the technology, as well as large investment in the field by DARPA in the USA under the Electronic and Photonic Integrated Circuit (EPIC) initiative. Significant investment in the technology has also followed in Japan, Korea, and to a lesser extent in the European Union (IMEC and LETI). The technology offers an opportunity to revolutionise a range of application areas by providing excellent performance at moderate cost due primarily to the fact that silicon is a thoroughly studied material, and unsurpassed in quality of fabrication with very high yield due to decades of investment from the microelectronics industry. The proposed work is a collaboration between 5 UK Universities (Surrey, St. Andrews, Leeds, Warwick and Southampton) with input from the industrial sector both in the UK and the USA. We will target primarily the interconnect applications, as they are receiving the most attention worldwide and have the largest potential for wealth creation, based on the scalability of silicon-based processes. However, we will ensure that our approach is more broadly applicable to other applications. This can be achieved by targeting device functions that are generic, and introducing specificity only when a particular application is targeted. The generic device functions we envisage are as follows: Optical modulation; coupling from fibre to sub-micron silicon waveguides; interfacing of optical signals within sub micron waveguides; optical filtering; optical/electronic integration; optical detection; optical amplification. In each of these areas we propose to design, fabricate, and test devices that will improve the current state of the art. Subsequently we will integrate these optical devices with electronics to further improve the state of the art in optical/electronic integration in silicon.We have included in our list of objectives, benchmark targets for each of our proposed devices to give a clear and unequivocal statement of ambition and intent.We believe we have assembled an excellent consortium to deliver the proposed work, and to enable the UK to compete on an international level. The combination of skills and expertise is unique in the UK and entirely complementary within the consortium. Further, each member of the consortium is recognised as a leading international researcher in their field.The results of this work have the potential to have very significant impact to wealth creation opportunities within the UK and around the world. For example emerging applications such as optical interconnect, both intra-chip, and inter-chip, as well as board to board and rack to rack, and Fibre To The Home for internet and other large bandwidth applications, will require highly cost effective and mass production solutions. Silicon Photonics is a seen as a leading candidate technology in these application areas if suitable performance can be achieved.
硅光子学是一个在过去5年中经历了快速增长和巨大变化的领域。麻省理工学院通信技术路线图旨在建立一个跨市场领域的通用架构平台,年收入可能达到 200 亿美元,根据该路线图,硅光子学是十大新兴技术之一。这在一定程度上是由于英特尔和 IBM 等美国大型半导体公司最近的参与,他们已经意识到该技术的巨大潜力,以及美国 DARPA 在电子领域的大力投资。和光子集成电路(EPIC)计划。日本、韩国以及欧盟(IMEC 和 LETI)也对该技术进行了大量投资。该技术以适中的成本提供卓越的性能,为一系列应用领域带来革命性的机会,这主要是因为硅是一种经过深入研究的材料,并且由于微电子领域数十年的投资,其制造质量无与伦比,产量非常高行业。拟议的工作是五所英国大学(萨里大学、圣安德鲁斯大学、利兹大学、华威大学和南安普顿大学)之间的合作,并得到了英国和美国工业部门的投入。我们将主要针对互连应用,因为基于硅工艺的可扩展性,它们在全球范围内受到最多的关注,并且具有最大的财富创造潜力。但是,我们将确保我们的方法更广泛地适用于其他应用程序。这可以通过定位通用的设备功能并仅在针对特定应用程序时引入特异性来实现。我们设想的通用设备功能如下: 光调制;从光纤到亚微米硅波导的耦合;亚微米波导内光信号的接口;光学过滤;光/电一体化;光学检测;光学放大。在每个领域,我们建议设计、制造和测试设备,以改善当前的技术水平。随后,我们将把这些光学器件与电子器件集成,以进一步提高硅中光学/电子集成的最先进水平。我们已将我们提出的每个器件的基准目标和基准目标纳入我们的目标清单中,以给出清晰明确的声明雄心和意图。我们相信我们已经组建了一个优秀的联盟来完成拟议的工作,并使英国能够在国际水平上竞争。技能和专业知识的结合在英国是独一无二的,并且在联盟内部完全互补。此外,该联盟的每个成员都被认为是各自领域的领先国际研究人员。这项工作的结果有可能对英国和世界各地的财富创造机会产生非常重大的影响。例如,诸如光互连(芯片内和芯片间,以及板对板和机架到机架)以及用于互联网和其他大带宽应用的光纤到户等新兴应用将需要高度的成本效益和质量生产解决方案。如果能够实现适当的性能,硅光子学将被视为这些应用领域的领先候选技术。

项目成果

期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures
Ge/SiGe 多量子阱异质结构电吸收响应的应变工程
  • DOI:
    10.1109/group4.2011.6053731
  • 发表时间:
    2011
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Lever L
  • 通讯作者:
    Lever L
Optical modulation using the silicon platform
使用硅平台的光调制
  • DOI:
    10.1117/12.2005423
  • 发表时间:
    2013
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Gardes F
  • 通讯作者:
    Gardes F
Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity
通过 X 射线衍射和反射率测量 SiGe/Ge/Si(100) 异质结构上 Ge 外延层的厚度测量精度
Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity
通过 X 射线衍射和反射率对硅基异质结构进行无损厚度表征
  • DOI:
    10.1016/j.sse.2011.01.036
  • 发表时间:
    2011
  • 期刊:
  • 影响因子:
    1.7
  • 作者:
    Liu X
  • 通讯作者:
    Liu X
O 2 + probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si 0.4 Ge 0.6 /Ge quantum wells
纳米级 Si 0.4 Ge 0.6 /Ge 量子阱超低能 SIMS 深度剖析的 O 2 探针样品条件
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David Leadley其他文献

David Leadley的其他文献

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{{ truncateString('David Leadley', 18)}}的其他基金

EPSRC Core Equipment Award 2022: University of Warwick
2022 年 EPSRC 核心设备奖:华威大学
  • 批准号:
    EP/X034836/1
  • 财政年份:
    2023
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
Spintronic device physics in Si/Ge Heterostructures.
硅/锗异质结构中的自旋电子器件物理。
  • 批准号:
    EP/J003263/1
  • 财政年份:
    2012
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
Creating Silicon Based Platforms for New Technologies
为新技术创建基于硅的平台
  • 批准号:
    EP/J001074/1
  • 财政年份:
    2012
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
Near infrared single photon detection using Ge-on-Si heterostructures
使用 Ge-on-Si 异质结构进行近红外单光子检测
  • 批准号:
    EP/I000011/1
  • 财政年份:
    2010
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
Room Temperature Terahertz Quantum Cascade Lasers on Silicon Substrates
硅衬底上的室温太赫兹量子级联激光器
  • 批准号:
    EP/H025294/1
  • 财政年份:
    2010
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
Silicon Resonant Tunnelling Diodes and Circuits
硅谐振隧道二极管和电路
  • 批准号:
    EP/G041229/1
  • 财政年份:
    2009
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
Renaissance Germanium
文艺复兴时期的锗
  • 批准号:
    EP/F031408/1
  • 财政年份:
    2008
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
On-Chip milliKelvin Electronic Refrigerator for Astronomical and Quantum Device Applications
适用于天文和量子设备应用的片上毫开尔文电子制冷机
  • 批准号:
    EP/F040784/1
  • 财政年份:
    2008
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
Ultimate Control of Strain Relaxation Processes in SiGe Layers
SiGe 层应变弛豫过程的最终控制
  • 批准号:
    EP/D034485/1
  • 财政年份:
    2006
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant

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基于三维硅基光子集成的模式复用/开关机理研究
  • 批准号:
    11904178
  • 批准年份:
    2019
  • 资助金额:
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  • 项目类别:
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  • 批准年份:
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  • 批准号:
    91950119
  • 批准年份:
    2019
  • 资助金额:
    80.0 万元
  • 项目类别:
    重大研究计划
基于多信道最小项的扩展型可编程逻辑阵列芯片研究
  • 批准号:
    61905083
  • 批准年份:
    2019
  • 资助金额:
    23.0 万元
  • 项目类别:
    青年科学基金项目
中红外波段硅波导集成二维材料光电探测器
  • 批准号:
    61905210
  • 批准年份:
    2019
  • 资助金额:
    26.0 万元
  • 项目类别:
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相似海外基金

UK Silicon Photonics
英国硅光子学
  • 批准号:
    EP/F001428/2
  • 财政年份:
    2012
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
UK Silicon Photonics
英国硅光子学
  • 批准号:
    EP/F001428/1
  • 财政年份:
    2008
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
UK Silicon Photonics
英国硅光子学
  • 批准号:
    EP/F001622/1
  • 财政年份:
    2008
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
UK Silicon Photonics
英国硅光子学
  • 批准号:
    EP/F001894/1
  • 财政年份:
    2008
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
UK Silicon Photonics
英国硅光子学
  • 批准号:
    EP/F002548/1
  • 财政年份:
    2008
  • 资助金额:
    $ 34.01万
  • 项目类别:
    Research Grant
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