Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors

新型时间分辨热成像：AlGaN/GaN 异质结构场效应晶体管

基本信息

批准号：
EP/D04698X/1
负责人：
Asen Asenov
金额：
$ 11.91万
依托单位：
University of Glasgow
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2006
资助国家：
英国
起止时间：
2006 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FD04698X%2F1
关键词：
Novel Time Resolved Thermal Imaging

项目摘要

The increasing complexity of tasks required by communication, radar, aircraft, automotive systems benefits from the use of novel materials in high speed devices. Such devices, for example, radio-frequency (RF) transistors used in mobile communication base stations or phased array radars, have to meet certain performance standards. Electrical characterization is mostly used today to tackle challenges in the device development process to meet these standards. Electrical measurements, however, determine average device properties rather than specific information on spatial characteristics such as temperature and electric field inhomogeneities. If direct imaging of temperature and electric field distribution over a device area was possible with high time resolution this would open a new dimension for the investigation of semiconductor devices. This would be of great benefit to device researchers and developers to study and tackle time-dependent phenomena limiting device performance. Adequate techniques, however, are not existent at present. In the proposed work we will develop the first high-spatial resolution time-resolved thermal prober for semiconductor device imaging ever built to our knowledge. Electric field distribution will be extracted from the temperature information. The technique will be illustrated on the example of the topical AlGaN/GaN HFETs to learn more about how these devices operate in detail and what limiting factors for current devices are. For example, we will obtain information about carrier trapping related to AlGaN/GaN HFET current collapse, but experience shows that other interesting and potentially important discoveries are likely to result as well.

通信、雷达、飞机、汽车系统所需的任务日益复杂，这得益于在高速设备中使用新型材料。此类设备，例如移动通信基站或相控阵雷达中使用的射频（RF）晶体管，必须满足某些性能标准。如今，电气特性主要用于应对器件开发过程中的挑战，以满足这些标准。然而，电气测量确定的是平均设备属性，而不是有关空间特征（例如温度和电场不均匀性）的特定信息。如果能够以高时间分辨率对器件区域上的温度和电场分布进行直接成像，这将为半导体器件的研究开辟新的维度。这对于设备研究人员和开发人员研究和解决限制设备性能的时间相关现象大有裨益。然而，目前尚不存在足够的技术。在拟议的工作中，我们将开发第一个据我们所知用于半导体器件成像的高空间分辨率时间分辨热探测器。将从温度信息中提取电场分布。我们将以热门 AlGaN/GaN HFET 为例来说明该技术，以详细了解这些器件的工作原理以及当前器件的限制因素。例如，我们将获得与 AlGaN/GaN HFET 电流崩塌相关的载流子捕获信息，但经验表明，也可能会产生其他有趣且潜在重要的发现。