Ultimate Control of Strain Relaxation Processes in SiGe Layers

SiGe 层应变弛豫过程的最终控制

• 批准号: EP/D034485/1
• 负责人: David Leadley
• 金额: $ 16.2万
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FD034485%2F1
• 关键词: Ultimate; Control; Strain; Relaxation; Processes

Silicon is the bedrock of the digital revolution. It occupies this position because of its unique chemical and physical properties. The low speed with which electrons and other current carriers move across silicon has traditionally been seen as a problem which can be solved by reductions in device size. As scaling of silicon devices into the nanometre regime becomes increasingly difficult and prohibitively expensive on a commercial scale, new channel materials could play a critical role that maintains the dominant position of silicon electronics well into the future. For example, the mobility of electrons, etc, may be increased, with consequent improvements in device speed and/or power consumption, by growing a thin layer of silicon on a SiGe platform which produces tensile strain in the silicon. Unfortunately current versions of these SiGe virtual substrates have high densities of defects and poor surface topography, making them unsuitable for commercial production. The proposed work concerns the development of novel and radical approaches to the development of SiGe virtual substrates of unprecedented quality in this respect.

硅是数字革命的基石。它因其独特的化学和物理特性而占据这一地位。电子和其他载流子在硅上移动的低速传统上被视为可以通过减小器件尺寸来解决的问题。随着将硅器件缩小到纳米级变得越来越困难，并且在商业规模上变得越来越昂贵，新的沟道材料可以发挥关键作用，在未来保持硅电子器件的主导地位。例如，通过在SiGe平台上生长硅薄层(其在硅中产生拉伸应变)，可以增加电子等的迁移率，从而提高装置速度和/或功耗。不幸的是，这些 SiGe 虚拟衬底的当前版本具有高密度的缺陷和较差的表面形貌，使得它们不适合商业生产。拟议的工作涉及开发新颖且激进的方法来开发在这方面具有前所未有质量的 SiGe 虚拟衬底。

项目成果

Low temperature epitaxial growth of compressive strained Ge layers on reverse linearly graded virtual substrate by RP-CVD

RP-CVD在反向线性梯度虚拟衬底上低温外延生长压应变Ge层

• 发表时间: 2009
• 作者: M Myronov