Microanalysis of semiconductor materials for far UV-C applications

用于远 UV-C 应用的半导体材料的微量分析

• 批准号: 2833268
• 金额: --
• 依托单位: University of Strathclyde
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2833268
• 关键词: Microanalysis; semiconductor; materials; far; UV

The far UV-C region (lambda<240 nm) of the electromagnetic spectrum promises to play an important role towards achieving UN Sustainable Goal No. 6: "ensure availability and sustainable management of water and sanitation for all". Since pathogens and chemical compounds exhibit absorption in the far UV-C, emission and detection of far UV-C light could enable water sanitation and water quality monitoring.Current far UV-C technologies employ Hg, D2 or Xe lamps and Si detectors which are inefficient, hazardous and bulky, and are therefore inadequate to tackle this societal challenge. Wide bandgap semiconductors are naturally suited to interact with far UV-C light and allow to produce compact, versatile and safe devices. In particular, AlGaN, Ga2O3, and h-BN are promising candidates for the production of far UV-C laser diodes, light emitting diodes and photodetectors.However, due to their recent emergence, several questions need to be solved about these materials before these technologies can be transferred to the real world. For example, the question of material polarisation, of device degradation, or of the impacts of defects on device performance are all important questions to tackle to produce efficient and reliable devices. This project will take advantage of the EPSRC strategic equipment Electron Probe MicroAnalyzer (EPMA) at the University of Strathclyde to investigate wide bandgap semiconductors (AlGaN, Ga2O3, and h-BN) materials and devices for far UV-C applications. The combination of scanning electron microscopy (SEM), energy- and wavelength-dispersive X-ray spectroscopy (EDX/WDX) and cathodoluminescence (CL) into a single instrument provides a unique opportunity to gain in-depth knowledge of the structural, chemical, optical properties of the materials at the nanoscale. Further insights into the materials properties will be attained by using the wider range of facilities available at the Strathclyde group, such as the setups for deep UV photoluminescence, for photoconduction in the UV, or the environmental SEMs.State-of-the-art samples will be provided for the project through international collaborations with academia and industry that the Strathclyde group has established for several years (e.g. with Technische Universität Berlin, AIXTRON Ltd, University of Liverpool). The project will be conducted in close collaboration with the crystal growers in order to build an in-depth understanding of how the growth affects the properties in order to produce materials for efficient far UV-C devices.

电磁波谱的远 UV-C 区域（λ<240 nm）有望在实现联合国可持续发展目标 6 方面发挥重要作用：“确保所有人都能获得水和卫生设施并进行可持续管理”。远 UV-C 的吸收展示、远 UV-C 光的发射和检测可以实现水卫生和水质监测。当前的远 UV-C 技术采用 Hg、D2 或 Xe 灯以及 Si 探测器，这些技术是效率低、危险且体积大，因此不足以应对这一社会挑战，宽带隙半导体自然适合与远紫外光相互作用，并可以生产紧凑、多功能和安全的器件，特别是 AlGaN、Ga2O3 和 h。 -BN 是生产远 UV-C 激光二极管、发光二极管和光电探测器的有前途的候选材料。然而，由于它们最近出现，在这些技术转移到现实世界之前，需要解决有关这些材料的几个问题。为了例如，材料极化、器件退化问题或缺陷对器件性能的影响都是生产高效可靠器件需要解决的重要问题。该项目将利用 EPSRC 战略设备电子探针显微分析仪 (EPMA)。斯特拉斯克莱德大学研究用于远 UV-C 应用的宽带隙半导体（AlGaN、Ga2O3 和 h-BN）材料和器件，结合扫描电子显微镜 (SEM)、能量和器件。将波长色散 X 射线光谱 (EDX/WDX) 和阴极发光 (CL) 集成到一台仪器中，为深入了解纳米尺度材料的结构、化学和光学特性提供了独特的机会。材料特性将通过使用斯特拉斯克莱德集团提供的更广泛的设施来获得，例如深紫外光致发光、紫外光导或环境的装置SEM。斯特拉斯克莱德集团多年来与学术界和工业界建立了国际合作关系（例如与柏林工业大学、爱思强有限公司、利物浦大学），将为该项目提供最先进的样品。与晶体生长者密切合作进行，以便深入了解生长如何影响性能，从而生产用于高效远 UV-C 器件的材料。