Imaging the effect of nanoscale static and dynamic disorder on topological spin currents

成像纳米级静态和动态无序对拓扑自旋电流的影响

• 批准号: 2749479
• 金额: --
• 依托单位: University of Cambridge
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2749479
• 关键词: Imaging; effect; nanoscale; static; dynamic

Since the discovery of the quantum Hall effect, the subsequent links to topology, and the granting of the 2016 Nobel prize, topological materials have been an exotic and intriguing part of physics. Their potential application to electronics, and information technology coupled with the insights to more fundamental physics makes them a promising material to continue to investigate. However, despite tremendous advances in the area, our understanding of the materials is limited to single crystals with little attention paid to the role of defects or grain boundaries. Device application may require thin films technologies and the role of defects and gain boundaries will become critical. In this project, we will study and understand the effect of nanoscale static and dynamic disorder on topological spin currents. We will use a novel experimental methodology, pump-probe microscopy, allowing us to reach resolution down to 10fs and spatially resolve the effects of disorder and nanoscale heterogeneity. This will be combined with first principals theoretical modelling, to build up a new understanding of how this class of materials behaves away from the perfect single crystal limit which is the current state of the art. Shedding light on possible new phenomena and answer pressing, device relevant questions.

自从发现量子厅效应以来，随后与拓扑的联系以及授予2016年诺贝尔奖，拓扑材料一直是物理学的异国情调和有趣的部分。它们对电子产品的潜在应用以及信息技术以及对更基本物理学的见解使它们成为继续调查的有希望的材料。但是，尽管该地区取得了巨大进步，但我们对材料的理解仅限于单晶，而很少关注缺陷或晶界的作用。设备应用可能需要薄膜技术，并且缺陷的作用和增益边界将变得至关重要。在这个项目中，我们将研究并了解纳米级静态和动态障碍对拓扑自旋电流的影响。我们将使用一种新型的实验方法，即泵探针显微镜，使我们能够达到10FS的分辨率，并在空间上解决障碍和纳米级异质性的影响。这将与第一本金理论建模相结合，以建立对这类材料如何远离完美的单晶极限的新理解，即当前的最新状态。阐明可能的新现象并回答按下，设备相关问题。