Using electrons to fabricate magnetic nano-circuits

利用电子制造磁性纳米电路

• 批准号: 2748911
• 金额: --
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2748911
• 关键词: Using; electrons; fabricate; magnetic; nano

Domain wall (DW) memory is a type of solid-state magnetic random-access memory that controls the motion and position of magnetic domains along a nano-scale magnetic track, i.e., racetrack (RT) memory. The magnetic moments of DWs are driven by transferring spin angular momentum from electrons in an applied current pulse. The position of the DWs can also be controlled by including defects along the RT that hold the DWs in place between current pulses. Conventional RT memories can vastly improve their storage density and connectivity if they expand into three-dimensional (3D) RT systems. However, this makes their fabrication and understanding the behaviour of DWs very challenging due to reduced access.The main aim of this PhD project is to fabricate 3D RT memories on in-situ transmission electron microscopy (TEM) Nano-chips using focused electron beam induced deposition (FEBID). This will allow nano-printing of complex 3D RT architectures and provide direct access to their localised chemistry, structure and controlled DW motion. Through optimising the composition, geometrical design and current pulse parameters of the 3D RTs the project will help address the key issue of consistent, power-efficient control of DWs motion in complex 3D nanomagnetic arrays.The student will focus on fabricating 3D RT memories using FEBID and characterising their chemical, structural and magnetic properties within the TEM. In particular, focus will be placed on how joule heating / annealing affects the saturation magnetisation and domain wall motion through the FEBID structures. The PhD student will also optimise the magnetic imaging techniques for live imaging of dynamic magnetism within the 3D RT memories.

域壁（DW）内存是一种固态磁随机访问记忆，它可以控制沿纳米级磁道轨道的磁域的运动和位置，即赛车（RT）存储器。 DW的磁矩是通过在应用电流脉冲中从电子中转移自旋角动量来驱动的。 DWS的位置也可以通过沿着电流脉冲之间的DW的RT进行控制来控制。如果传统的RT记忆扩展为三维（3D）RT系统，则可以极大地提高其存储密度和连接性。但是，这使他们的制造和了解DW的行为非常具有挑战性。该博士学位项目的主要目的是使用浓缩的电子束对位于原位的传输电子显微镜（TEM）纳米芯片制造3D RT记忆。沉积（febid）。这将允许对复杂的3D RT架构的纳米印刷，并直接访问其局部化学，结构和受控DW运动。通过优化3D RTS的构图，几何设计和当前脉冲参数，该项目将有助于解决一致的，强力控制DWS运动的关键问题。并表征其在TEM内的化学，结构和磁性。特别是，将重点放在焦耳加热 /退火如何影响饱和磁化和域壁运动中。博士生还将优化3D RT记忆中动态磁性的实时成像的磁成像技术。