Integration of Sb-based III-V materials grown directly onto Silicon by MBE

通过 MBE 直接生长在硅上的 Sb 基 III-V 材料的集成

• 批准号: 2586325
• 金额: --
• 依托单位: Lancaster University
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2586325
• 关键词: Integration; Sb; based; III; materials

Modern high-performance optoelectronic devices have widely incorporated III-V semiconductor materials into their structure, especially when operating near the technologically important near-IR and mid-IR spectral ranges. These materials have attracted great interest in many sectors due to their wide range of possible bandgaps, band offsets along with high electron and hole mobilities. Properties which are useful for detectors, photovoltaics and the telecoms laser industry. With respect to lasers, the current technology has hit the limit for efficiency and bandwidth and requires a new approach for growing industrial demands.However direct integration of III-V's onto other III-V substrates such as InAs or GaSb, is not the most effective approach due to the small wafer sizes available and their high cost, bad thermal conductivity and non-optimised surface oxide layers. Integration onto Silicon on the other hand is technologically challenging, but is an important development for large-scale production and implementation of any devices. The large lattice mismatch (~13%) between for example GaSb and Silicon makes this direct epitaxial growth onto Silicon wafers difficult without techniques to manage the internal stresses inside the material in a way that protects the device to be grown on the chip. This work builds upon the pioneering work on the implementation of compound semiconductor optoelectronic devices on Silicon recently developed at Lancaster, and has resulted in one of the lowest reported threading defect densities of GaSb on Si using MBE.

现代的高性能光电设备已将III-V半导体材料广泛融合到其结构中，尤其是在技术重要的近IIR和中IR光谱范围内运行时。这些材料由于其广泛的带盖，带偏移以及高电子和孔迁移而引起了许多领域的兴趣。对探测器，光伏和电信行业有用的属性。关于激光器，当前的技术达到了效率和带宽的限制，需要一种新的工业需求方法。但是，直接将IIII-V直接整合到III-V基质（例如INAS或GASB）上，这并不是最有效的由于可用的小晶片尺寸及其高成本，不良的热导率和未优化的表面氧化物层，进近。另一方面，将其集成到硅上是具有挑战性的，但这是大规模生产和任何设备实施的重要发展。例如，煤气和硅之间的大晶格不匹配（〜13％）使这种直接的外延生长在没有技术的情况下难以管理材料内部应力的情况，以保护芯片上要生长的设备的方式来管理材料内部的内部应力。这项工作是基于最近在Lancaster开发的硅的复合半导体光电设备实施的开创性工作，并导致了使用MBE在Si上燃油的最低螺纹缺陷缺陷密度之一。