MBE-grown 1550-nm III-V quantum-dot materials and devices on Si substrate for Si photonic systems

用于硅光子系统的硅衬底上 MBE 生长的 1550 nm III-V 量子点材料和器件

• 批准号: 2433417
• 金额: --
• 依托单位: University College London
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2433417
• 关键词: MBE; grown; 1550; nm; III

Recently high performance electrically pumped 1300-nm quantum-dot lasers have been successfully demonstrated on Si substrate between Cardiff and UCL. Pushing the lasing wavelength of III-V/Si quantum-dot laser to most desirable telecom wavelength of 1550 nm will be next challenge for epitaxial growth. 1550-nm quantum-dot laser will be exploited in this project based on our techniques on Si-based and Ge-based 1300-nm InAs/GaAs quantum-dot lasers, GaAs-based GaAsSb metamorphic 1550-nm quantum dots [Appl. Phys. Lett. 92, 111906 (2008)] and conventional InP-based 1550-nm quantum dots. Once practical 1550-nm III-V/Si quantum-dot device having been demonstrated, the integration of photonic component with Si waveguides will be studied for Si Photonic System, hence further integration with Silicon microelectronics. The methodology will focus on exploiting novel growth techniques by using new epitaxial facility, Molecular Beam Epitaxy on InGaAsP/InP, InAlGaAs/InP, and GaAsSb/GaAs quantum-dot system at UCL EEE department, device-processing facilities at LCN, and study the optical and structural properties by ATM and STM at UCL.

最近，高性能泵送的1300 nm量子点激光器已在加的夫和UCL之间的SI基板上成功证明。将IIII-V/Si量子点激光器的激光波长推向1550 nm的最理想的电信波长将是外延生长的下一个挑战。该项目将根据我们基于SI基于SI和GE的1300-NM INAS/GAAS量子点激光器，基于GAAS GAAS GAAS GAASSB MENAMORPHIC 1550-NM量子点[Appl。物理。 Lett。 92，111906（2008）]和常规INP的1550-nm量子点。一旦证明了实用的1550-nm III-V/Si量子点设备，将研究光子组件与SI波导的集成以用于Si光子系统，从而进一步与硅微电源集成。该方法将着重于利用新型增长技术，使用新的外延设施，INGAASP/INP上的分子束外延，Inalgaas/INP和UCL EEE部门的GAASSB/GAAS量子点系统，LCN的设备处理设施，并研究UCL处的ATM和STM的光学和结构特性。