Fabrication of High Speed GaN-based Transistors and DC-to-DC Converters.

高速 GaN 晶体管和 DC-DC 转换器的制造。

• 批准号: 1997094
• 金额: --
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1997094
• 关键词: Fabrication; Speed; GaN; based; Transistors

Next generation 5G wireless communication systems will require dramatic changes in the radio-frequency power amplifiers (PA) to meet the very high transfer data rate requirements (>10x higher than 4G). In addition, the 5G systems demand low power consumption but the conventional PA with a fixed voltage supply have poor efficiency with increasing frequency. Voltage-variable PA with lower energy losses, on the other hands, have potential to meet the 5G demands. However, lack of high switching speed (>100MHz) variable-voltage supply for the PA presents a challenge for high frequency system design.This project aims to realise ultra-high switching speed (200MHz) and high efficiency (>80%) voltage supplies using electronic switching devices made from gallium nitride (GaN) semiconductor for the next generation PA. Novel GaN device architecture which utilises multiple-gate structures will be fabricated to reduce voltage switching times and losses for high speed operations. Simulations and characterisations will be performed to understand the device physics and switching behaviours. Novel electronic control circuits for the proposed GaN devices in the voltage supplies will be designed. Finally, integration of the control circuits with GaN devices in a single chip will be carried out to reduce the unwanted parasitic and to boost the voltage supplies' switching performance to meet the 5G system demands.

下一代 5G 无线通信系统将要求射频功率放大器 (PA) 发生巨大变化，以满足非常高的传输数据速率要求（比 4G 高 10 倍以上）。此外，5G系统要求低功耗，但固定电压供电的传统PA随着频率的增加效率较差。另一方面，能量损耗较低的变压 PA 有潜力满足 5G 需求。然而，PA缺乏高开关速度（>100MHz）可变电压电源，给高频系统设计带来了挑战。该项目旨在实现超高开关速度（200MHz）和高效率（>80%）电压电源将氮化镓 (GaN) 半导体制成的电子开关器件用于下一代 PA。将制造利用多栅极结构的新型 GaN 器件架构，以减少高速操作的电压切换时间和损耗。将进行模拟和表征以了解器件物理和开关行为。将为电压源中的 GaN 器件设计新颖的电子控制电路。最后，将控制电路与GaN器件集成在单个芯片中，以减少不必要的寄生并提高电压源的开关性能，以满足5G系统的需求。

项目成果

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

• DOI: 10.1088/1361-6463/abcb34
• 发表时间: 2021-03-11
• 期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
• 影响因子: 3.4
• 作者: Pinchbeck, Joseph;Lee, Kean Boon;Houston, Peter
• 通讯作者: Houston, Peter