Fabrication of High Speed GaN-based Transistors and DC-to-DC Converters.

高速 GaN 晶体管和 DC-DC 转换器的制造。

• 批准号: 1997094
• 金额: --
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1997094
• 关键词: Fabrication; Speed; GaN; based; Transistors

Next generation 5G wireless communication systems will require dramatic changes in the radio-frequency power amplifiers (PA) to meet the very high transfer data rate requirements (>10x higher than 4G). In addition, the 5G systems demand low power consumption but the conventional PA with a fixed voltage supply have poor efficiency with increasing frequency. Voltage-variable PA with lower energy losses, on the other hands, have potential to meet the 5G demands. However, lack of high switching speed (>100MHz) variable-voltage supply for the PA presents a challenge for high frequency system design.This project aims to realise ultra-high switching speed (200MHz) and high efficiency (>80%) voltage supplies using electronic switching devices made from gallium nitride (GaN) semiconductor for the next generation PA. Novel GaN device architecture which utilises multiple-gate structures will be fabricated to reduce voltage switching times and losses for high speed operations. Simulations and characterisations will be performed to understand the device physics and switching behaviours. Novel electronic control circuits for the proposed GaN devices in the voltage supplies will be designed. Finally, integration of the control circuits with GaN devices in a single chip will be carried out to reduce the unwanted parasitic and to boost the voltage supplies' switching performance to meet the 5G system demands.

下一代5G无线通信系统将需要重大变化射频功率放大器（PA），以满足非常高的传输数据速率要求（> 4G> 10倍）。此外，5G系统需要低功耗，但是带有固定电压供应的常规PA的效率较差，频率越来越高。另一方面，电压变量可损失较低的能量损失有可能满足5G需求。但是，PA缺乏高开关速度（> 100MHz）可变电压供应给高频系统设计带来了一个挑战。此项目旨在使用由氮化壳（GAN）半多核心制成的电子开关设备实现超高开关速度（200MHz）和高效率（> 80％）电压供应。利用多门结构的新型GAN设备体系结构将被制造以减少高速操作的电压切换时间和损失。将执行模拟和特征以了解设备物理和切换行为。将设计针对电压供应中建议的GAN设备的新型电子控制电路。最后，将在单个芯片中将控制电路与GAN设备集成，以减少不需要的寄生虫，并提高电压供应的切换性能以满足5G系统需求。

项目成果

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

• DOI: 10.1088/1361-6463/abcb34
• 发表时间: 2021-03-11
• 期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
• 影响因子: 3.4
• 作者: Pinchbeck, Joseph;Lee, Kean Boon;Houston, Peter
• 通讯作者: Houston, Peter