Unveiling electron motion at surfaces and interfaces on ultrashort length and ultrafast time scales

在超短长度和超快时间尺度上揭示表面和界面上的电子运动

• 批准号: EP/T025077/1
• 负责人: Michael Johnston
• 金额: $ 236.38万
• 依托单位: University of Oxford
• 依托单位国家: 英国
• 项目类别: Fellowship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FT025077%2F1
• 关键词: Unveiling; electron; motion; surfaces; interfaces

Semiconductor devices are becoming an increasingly important part of modern life. Smaller and faster transistors are currently powering revolutions in information technology and artificial intelligence. Furthermore, large-area thin-films of semiconductors offer a realistic solution to decarbonising the world's energy production through efficient solar to electrical energy conversion. With transistor feature sizes reaching the nanometre length scale and multijunction thin film photovoltaics offering very efficient energy production, surfaces increasingly influence the function of these devices. Currently there are few methods available to observe the electrical properties of semiconductor surfaces and interfaces on nanometre length scales, with high enough time resolution. This Fellowship will lead the creation of a unique instrument for understanding the electrical properties of semiconductor surfaces and interfaces. The techniques of scanning tunnelling microscopy, scanning near-field optical microscopy and optical pump terahertz probe spectroscopy will be combined in a single instrument able to probe electrical properties of materials at unprecedented spatial and temporal resolution. During the fellowship the novel instrument will be exploited to improve the power conversion efficiency and stability of solar cells by revealing the mechanisms of charge recombination, trapping and degradation at surfaces and grain boundaries. While the fellowship is focussed on study of semiconductors for energy conversion, active engagement with the wider scientific community, government and industry over the 5 years will lead to dissemination of the technique and instrumentation into other areas of surface science and beyond.

半导体器件正在成为现代生活中越来越重要的一部分。更小、更快的晶体管目前正在推动信息技术和人工智能的革命。此外，大面积半导体薄膜通过高效的太阳能到电能的转换，为世界能源生产脱碳提供了现实的解决方案。随着晶体管特征尺寸达到纳米长度尺度，多结薄膜光伏发电提供非常高效的能源生产，表面越来越影响这些设备的功能。目前，能够以足够高的时间分辨率观察纳米长度尺度上的半导体表面和界面的电特性的方法很少。该奖学金将领导创建一种独特的仪器，用于了解半导体表面和界面的电特性。扫描隧道显微镜、扫描近场光学显微镜和光泵太赫兹探针光谱技术将结合在一台仪器中，能够以前所未有的空间和时间分辨率探测材料的电特性。在研究期间，该新型仪器将通过揭示表面和晶界的电荷复合、捕获和降解机制来提高太阳能电池的功率转换效率和稳定性。虽然该奖学金的重点是用于能量转换的半导体的研究，但在五年内与更广泛的科学界、政府和行业的积极参与将导致该技术和仪器传播到表面科学的其他领域及其他领域。

项目成果

Exciton Formation Dynamics and Band-Like Free Charge-Carrier Transport in 2D Metal Halide Perovskite Semiconductors

二维金属卤化物钙钛矿半导体中的激子形成动力学和带状自由载流子传输

• DOI: http://dx.10.1002/adfm.202300363
• 发表时间: 2023
• 期刊: Advanced Functional Materials
• 影响因子: 19
• 作者: Motti S

Polarization anisotropy in nanowires: Fundamental concepts and progress towards terahertz-band polarization devices

纳米线的偏振各向异性：太赫兹带偏振器件的基本概念和进展

• DOI: http://dx.10.1016/j.pquantelec.2022.100417
• 发表时间: 2022
• 期刊: Progress in Quantum Electronics
• 影响因子: 11.7
• 作者: Johnston M

Impact of Hole-Transport Layer and Interface Passivation on Halide Segregation in Mixed-Halide Perovskites

空穴传输层和界面钝化对混合卤化物钙钛矿中卤化物偏析的影响

• DOI: http://dx.10.1002/adfm.202204825
• 发表时间: 2022
• 期刊: Advanced Functional Materials
• 影响因子: 19
• 作者: Lim V

Phase segregation in mixed-halide perovskites affects charge-carrier dynamics while preserving mobility.

混合卤化物钙钛矿中的相分离会影响载流子动力学，同时保持迁移率。

• DOI: http://dx.10.1038/s41467-021-26930-4
• 发表时间: 2021
• 期刊: Nature communications
• 影响因子: 16.6
• 作者: Motti SG

Solvent-Free Method for Defect Reduction and Improved Performance of p-i-n Vapor-Deposited Perovskite Solar Cells.

用于减少 p-i-n 气相沉积钙钛矿太阳能电池缺陷并提高性能的无溶剂方法。

• DOI: http://dx.10.1021/acsenergylett.2c00865
• 发表时间: 2022
• 期刊: ACS energy letters
• 影响因子: 22
• 作者: Lohmann KB