Ferroelectric, Ferroelastic and Multiferroic Domain Walls: a New Horizon in Nanoscale Functional Materials

铁电、铁弹性和多铁畴壁：纳米功能材料的新视野

基本信息

批准号：
EP/P02453X/1
负责人：
J M Gregg
金额：
$ 77.48万
依托单位：
Queen's University Belfast
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2017
资助国家：
英国
起止时间：
2017 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FP02453X%2F1
关键词：
Ferroelectric Ferroelastic Multiferroic Domain Walls

项目摘要

Some functional materials, such as ferroelectrics, contain membrane or sheet structures called "domain walls". For decades, domain walls were dismissed as being minor microstructural components of little significance. It is now clear that nothing could be further from the truth. Domain walls often, in fact, have unique functional properties that are completely different from the domains that they surround: they can be conductors or superconductors when the rest of the material is insulating; they can display magnetic order in non-magnetic crystals and they can possess aligned electrical dipoles when the matrix surrounding them is non-polar. In effect, domain walls represent a new class of sheet-like nanoscale functional material. Gaining a basic understanding of the behaviour of such a new family of sheet materials, which already shows a very wide gamut of properties, is certainly worthwhile, but domain walls offer so much more: uniquely, they are spatially mobile, can be controllably shunted from point to point, and can be spontaneously created, or made to disappear. This unique "now-you-see-it, now-you-don't" dynamic property could radically alter the way in which we think about the integration of functional materials into devices and the way in which device functionality is enabled: functionally active domain walls themselves could be introduced or removed as the primary mechanism in device operation. As a simple example, a new form of transistor could readily be envisaged where switching between the "ON" and "OFF" states is achieved through the injection and annihilation respectively of conducting domain wall channels connecting the source and drain electrodes. Multiple controlled domain wall injection events (resulting from sequential pulses in electrical bias between source and drain, for example) could create a series of different resistance states, depending on the number of conducting walls introduced. Thus a new kind of memristor device could be created. Possibilities for future domain wall-based applications are tantalising. However, relevant research is still at an early stage; a great deal needs to be done to establish the basic physics of the functional behavior of domain walls and strategies need to be developed to allow their reliable deployment with nanoscale precision. Only then can the potential for domain wall based devices be properly assessed.In this Critical Mass Grant, we seek to harness the collaborative effort of a number of world-class UK-based academic teams (in Cambridge, St. Andrews, Warwick and Belfast) to explore novel functionally active ferroelectric, ferroelastic and multiferroic domain walls. Together, we will: (i) Generate badly needed new and fundamental insight into the properties of known functionally active domain wall systems;(ii) Perform smart searches for new functionally active domain wall systems;(iii) Demonstrate simple electronic and thermal devices (transistors, memristors and smart heat transfer chips) in which domain wall properties are the key to device performance and hence assess the potential for wider domain wall-based applications.

一些功能材料，例如铁电体，包含称为“畴壁”的膜或片结构。几十年来，磁畴壁被认为是意义不大的次要微观结构成分。现在很清楚，事实并非如此。事实上，畴壁通常具有与它们周围的畴完全不同的独特功能特性：当材料的其余部分是绝缘时，它们可以是导体或超导体；它们可以在非磁性晶体中显示磁序，并且当它们周围的基质是非极性时，它们可以拥有对齐的电偶极子。实际上，畴壁代表了一类新型片状纳米级功能材料。对这种新的片状材料系列的行为有一个基本的了解，它已经显示出非常广泛的特性，当然是值得的，但畴壁提供了更多的东西：独特的是，它们在空间上可移动，可以可控地从点对点，可以自发地创建，也可以使其消失。这种独特的“现在你看到了，现在你看不到”的动态属性可以从根本上改变我们对将功能材料集成到设备中的方式以及启用设备功能的方式：功能活跃畴壁本身可以作为设备操作的主要机制被引入或移除。作为一个简单的例子，可以容易地设想一种新形式的晶体管，其中通过连接源极和漏极的导电畴壁沟道分别的注入和湮没来实现“ON”和“OFF”状态之间的切换。多个受控畴壁注入事件（例如，由源极和漏极之间的电偏置中的连续脉冲引起）可以创建一系列不同的电阻状态，具体取决于引入的导电壁的数量。因此可以创建一种新型忆阻器装置。未来基于畴壁的应用的可能性是诱人的。但相关研究仍处于早期阶段；需要做大量工作来建立畴壁功能行为的基本物理原理，并且需要制定策略以允许其以纳米级精度可靠部署。只有这样，才能正确评估基于域墙的设备的潜力。在这项临界质量拨款中，我们寻求利用许多世界一流的英国学术团队（剑桥、圣安德鲁斯、沃里克和贝尔法斯特）的协作努力）探索新型功能活性铁电、铁弹性和多铁磁畴壁。我们将共同：（i）对已知功能活性畴壁系统的特性产生急需的新的基本见解；（ii）对新的功能活性畴壁系统进行智能搜索；（iii）演示简单的电子和热器件（晶体管、忆阻器和智能传热芯片），其中畴壁特性是器件性能的关键，因此评估更广泛的基于畴壁的应用的潜力。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Observation of Unconventional Dynamics of Domain Walls in Uniaxial Ferroelectric Lead Germanate

DOI：
10.1002/adfm.202000284
发表时间：
2020-03
期刊：
Advanced Functional Materials
影响因子：
19
作者：
O. Bak;T. S. Holstad;Yueze Tan;Haidong Lu;D. Evans;K. Hunnestad;Bo Wang;J. McConville;P. Becker;L. Bohatý;I. Lukyanchuk;V. Vinokur;A. V. van Helvoort;J. Gregg;Long-qing Chen;D. Meier;A. Gruverman
通讯作者：
O. Bak;T. S. Holstad;Yueze Tan;Haidong Lu;D. Evans;K. Hunnestad;Bo Wang;J. McConville;P. Becker;L. Bohatý;I. Lukyanchuk;V. Vinokur;A. V. van Helvoort;J. Gregg;Long-qing Chen;D. Meier;A. Gruverman

Nanodomain patterns in ultra-tetragonal lead titanate (PbTiO3)