Compact diode-laser-pumped THz source based on a novel photomixer device.

基于新型光混频器装置的紧凑型二极管激光泵浦太赫兹源。

• 批准号: EP/H015795/1
• 负责人: Edik Rafailov
• 金额: $ 66.9万
• 依托单位: University of Dundee
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2010
• 资助国家: 英国
• 起止时间: 2010 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FH015795%2F1
• 关键词: Compact; diode; laser; pumped; THz

Within this project we will carry out theoretical and experimental studies of novel types of compact THz sources where semiconductor laser diodes will be combined with a novel dipole/spiral and waveguide photoconductor devices. Specifically, we propose to design, fabricate and assess the performance of the material systems of amorphous/nanocrystalline silicon and quantum-dot semiconductors as materials having short electron-hole photocarrier lifetimes and high photosensitivity at 780-1300nm. In addition to fully characterising and optimising the dual- and multi-longitudinal modes diode lasers we will evaluate the performance of these lasers in the optical pumping of the dipole/spiral and waveguided antennae for obtaining THz power levels in the >100 microwatts range with optimised beam characteristics. The overall objective of this work is to produce a diode-laser-driven, ultra-compact THz source having some potential for additional functionality through its frequency tunability.

在该项目中，我们将对新型紧凑型THZ来源进行理论和实验研究，其中半导体激光二极管将与新型的偶极/螺旋/螺旋和波导光电导体设备结合使用。具体而言，我们建议设计，制造和评估无定形/纳米晶体硅和量子点半导体的材料系统的性能，作为具有短电子孔光载体寿命短的材料，并在780-1300nm处具有高光敏性。除了充分表征和优化二极管和多次模式二极管激光器，我们还将评估这些激光器在偶极/螺旋和波导触角的光学泵送中的性能梁特性。这项工作的总体目的是生产二极管激光驱动的超紧凑型THZ源，其频率可调性具有一些其他功能的潜力。

项目成果

Quantum Dot-Based Terahertz Photoconductive Antenna

基于量子点的太赫兹光电导天线

• 发表时间: 2014
• 作者: Gorodetsky A.

Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers

• DOI: 10.1109/jstqe.2017.2690831
• 发表时间: 2018-03
• 期刊: IEEE Journal of Selected Topics in Quantum Electronics
• 影响因子: 4.9
• 作者: Andrei Gorodetsky;A. Yadav;E. Avrutin;K. Fedorova;E. Rafailov

Studying carrier lifetime in InAs/GaAs quantum dot devices by optically pump - terahertz probe measurements

通过光泵 - 太赫兹探针测量研究 InAs/GaAs 量子点器件中的载流子寿命

• 发表时间: 2015
• 作者: Leite I

Quantum Dot-Based Terahertz Photoconductive Antennas

基于量子点的太赫兹光电导天线

• 发表时间: 2014
• 作者: Gorodetsky, A

Optical pump-terahertz probe study of carrier relaxation processes in InAs:GaAs quantum dot terahertz materials

InAs:GaAs量子点太赫兹材料中载流子弛豫过程的光泵太赫兹探针研究

• 期刊: App Phys Lett
• 作者: Gorodetsky